One-dimensional Si/Ge nanowires and their heterostructures for multifunctional applications—a review
Remarkable progress has been made in the field of one-dimensional semiconductor
nanostructures for electronic and photonic devices. Group-IV semiconductors and their …
nanostructures for electronic and photonic devices. Group-IV semiconductors and their …
Recent advances in germanium emission
The optical properties of germanium can be tailored by combining strain engineering and n-
type doping. In this paper, we review the recent progress that has been reported in the study …
type doping. In this paper, we review the recent progress that has been reported in the study …
A micromachining-based technology for enhancing germanium light emission via tensile strain
Germanium is an attractive material for silicon-compatible optoelectronics, but in its bulk
form it does not emit light efficiently because of its indirect bandgap. Applying tensile strain …
form it does not emit light efficiently because of its indirect bandgap. Applying tensile strain …
Direct-gap photoluminescence with tunable emission wavelength in Ge1− ySny alloys on silicon
Direct-gap photoluminescence has been observed at room temperature in Ge 1− y Sn y
alloys grown on (001) Si substrates. The emission wavelength is tunable over a 90 meV …
alloys grown on (001) Si substrates. The emission wavelength is tunable over a 90 meV …
The Acoustophotoelectric Effect: Efficient Phonon–Photon–Electron Coupling in Zero-Voltage-Biased 2D SnS2 for Broad-Band Photodetection
Two-dimensional (2D) layered metal dichalcogenides constitute a promising class of
materials for photodetector applications due to their excellent optoelectronic properties. The …
materials for photodetector applications due to their excellent optoelectronic properties. The …
Compositional dependence of the direct and indirect band gaps in Ge1− ySny alloys from room temperature photoluminescence: implications for the indirect to direct …
The compositional dependence of the lowest direct and indirect band gaps in Ge 1− y Sn y
alloys has been determined from room-temperature photoluminescence measurements …
alloys has been determined from room-temperature photoluminescence measurements …
Direct gap electroluminescence from Si/Ge1− ySny pin heterostructure diodes
Electroluminescence spectra from Si/Ge 1− y Sn y heterostructure diodes are reported. The
observed emission is dominated by direct gap optical transitions and displays the expected …
observed emission is dominated by direct gap optical transitions and displays the expected …
Ge0.92Sn0.08/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate
The development of an efficient group-IV light source that is compatible with the CMOS
process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been …
process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been …
Towards monolithic integration of germanium light sources on silicon chips
S Saito, AZ Al-Attili, K Oda… - … Science and Technology, 2016 - iopscience.iop.org
Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …
Strain-enhanced photoluminescence from Ge direct transition
Strain-enhanced photoluminescence from Ge direct transition | Applied Physics Letters | AIP
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