[图书][B] Gallium nitride and silicon carbide power devices

BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Wide bandgap semiconductor opportunities in power electronics

KO Armstrong, S Das, J Cresko - 2016 IEEE 4th Workshop on …, 2016 - ieeexplore.ieee.org
Wide bandgap (WBG) power electronics is a very small segment of power electronics market
(1%) and about 0.05% of the total semiconductor market today. The US has a strong …

A new strategy of efficiency enhancement for traction systems in electric vehicles

X Ding, H Guo, R Xiong, F Chen, D Zhang, C Gerada - Applied Energy, 2017 - Elsevier
The inverter-motor drive system is the main traction force in electric vehicles (EVs). The
overall efficiency of inverter-motor will directly determine the energy consumption of EVs. In …

Synthesis and characterization of multi-phase structure, optical and electrical properties on (Ga–Sn) oxide composite thin film by sol-gel method

MS Bae, JW Lee, JH Koh - Materials Chemistry and Physics, 2023 - Elsevier
The structural and optical properties of the films were investigated as a function of increasing
high Gallium content amounts in the range 10–30 mol%. The composite thin films were …

Analysis and experimental evaluation of middle-point inductance's effect on switching transients for multiple-chip power module package

F Yang, Z Wang, Z Zhang… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Middle-point inductance can be introduced in multiple-chip power module package designs.
In this paper, the effect of middle-point inductance on switching transients is analyzed first …

Investigation of aging's effect on the conduction and switching loss in SiC MOSFETs

F Yang, E Ugur, S Pu, B Akin… - 2019 IEEE Energy …, 2019 - ieeexplore.ieee.org
The long-term device and package degradations in SiC MOSFETs can affect the power
converter's performance. In this paper, the aging's effect on the device's conduction and …

Development of a low-inductance SiC trench MOSFET power module for high-frequency application

ZJ Wang, F Yang, S Campbell… - 2018 IEEE Applied …, 2018 - ieeexplore.ieee.org
This paper deals with the development of a low-inductance multiple-chip power module with
state-of-art 1200 V SiC Trench MOSFETs for high-frequency application. Specifically, a …

Wide bandgap semiconductor opportunities in power electronics

S Das, LD Marlino, KO Armstrong - 2018 - osti.gov
The report objective is to explore the Wide Bandgap (WBG) Power Electronics (PE) market,
applications, and potential energy savings in order to identify key areas where further …

Package degradation's impact on SiC MOSFETs loss: A comparison of Kelvin and non-kelvin designs

F Yang, S Pu, B Akin, SW Butler… - 2021 IEEE Applied …, 2021 - ieeexplore.ieee.org
Aging-related electrical parameter shifts in SiC MOSFETs can adversely affect the power
converter performance. In this paper, the package degradation's effect on the device's …

Research on AC & DC hybrid power supply system with high‐proportion renewable energy of data centre

W He, F Xue, F Zheng, Y Zhou, K Liu… - The Journal of …, 2019 - Wiley Online Library
In the background of the energy Internet, the number of data centres is increasing, aiming at
the shortcomings of power supply and reliability in power supply system of traditional data …