A GaN semiconductor device with improved heat resistance of the Schottky junction
electrode and excellent power performance and reliability is provided. In this semiconductor …

The present invention relates to a high Voltage and high power gallium nitride (GaN)
transistor structure. In general, the GaN transistor structure includes a sub-buffer layer that …

A semiconductor device having improved heat dissipation is disclosed. The semiconductor
device includes a semi-insulating substrate and epitaxial layers disposed on the semi …

In a nitride-system semiconductor, being different from GaAs and Si, Schottky barrier heights
do change signifi cantly against work functions d of metals. Then, for example, on an HEMT …

5,028,879 A 7/1991 Kim 6,724.252 B2 4/2004 Ngo et al. 5,046,155. A 9/1991 Beyer et al.
6,727,762 B1 4/2004 Kobayashi 5,047,355. A 9/1991 Huber et al. 6,748.204 B1 6/2004 …

US9325281B2 - Power amplifier controller - Google Patents US9325281B2 - Power amplifier
controller - Google Patents Power amplifier controller Download PDF Info Publication number …

GaNBUFFERLAYER serves to prevent injection of electrons into a Substrate during high
Voltage operation, thereby improving performance of the GaN transistor structure during …

(57) ABSTRACT A high Voltage and high power gallium nitride (GaN) transis tor structure is
disclosed. A plurality of structural epitaxial layers including a GaN buffer layer is deposited …

Methods for fabricating a field effect transistor having at least one structure configured to
redistribute and/or reduce an electric field from gate finger ends are disclosed. The methods …

The present invention has been developed the above-mentioned problem being taken into
account, and an object thereof is to provide a compound semiconductor device capable of …