Growth of silicon oxynitride films by atmospheric pressure plasma jet
X Zhang, S Ptasinska - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
Ultra-thin silicon oxynitride (SiO x N y) layers were deposited by direct interaction of plasma
species formed in an atmospheric pressure plasma jet (APPJ) with a silicon wafer. APPJs …
species formed in an atmospheric pressure plasma jet (APPJ) with a silicon wafer. APPJs …
Effect of rapid thermal oxidation on structure and photoelectronic properties of silicon oxide in monocrystalline silicon solar cells
CP Liu, MW Chang, CL Chuang - Current Applied Physics, 2014 - Elsevier
This paper concerns the topic of surface passivation properties of rapid thermal oxidation on
p-type monocrystalline silicon wafer for use in screen-printed silicon solar cells. It shows that …
p-type monocrystalline silicon wafer for use in screen-printed silicon solar cells. It shows that …
Synthesis of silicon oxynitride layers by dual ion-implantation and their annealing behaviour
Single crystal n-type silicon samples were implanted at room temperature sequentially by
molecular oxygen (16O2+) and nitrogen (14N2+) in different proportions to high fluence …
molecular oxygen (16O2+) and nitrogen (14N2+) in different proportions to high fluence …
Insulators obtained by electron cyclotron resonance plasmas on Si or GaAs
Silicon oxynitride (SiOxNy) and nitride (SiNx) insulators have been deposited or grown (with
or without silane in the gas mixture, respectively) by electron cyclotron resonance (ECR) …
or without silane in the gas mixture, respectively) by electron cyclotron resonance (ECR) …
Infrared spectra of photochemically grown suboxides and oxynitrides at the Si/SiO2 interface
P Hess, J Lambers - Microelectronic engineering, 2004 - Elsevier
Photoinduced growth of ultrathin silicon-oxide and silicon-oxynitride layers on Si (111) and
Si (110) was studied at room temperature using F2-laser irradiation (157 nm) in an O2 or …
Si (110) was studied at room temperature using F2-laser irradiation (157 nm) in an O2 or …
Ultrathin silicon oxynitride formed by low-energy electron impact plasma nitridation and chemical oxidation methods
M Takahashi, M Tamura, A Asuha… - Journal of applied …, 2003 - pubs.aip.org
A formation method of ultrathin silicon oxynitride layers with high-nitrogen concentrations
and good electrical characteristics has been developed. This method consists of nitridation …
and good electrical characteristics has been developed. This method consists of nitridation …
Transmission electron microscopy study of simultaneous high-dose C++ N+ co-implantation into (1 1 1) Si
A structural electron microscopy study of (111) Si samples implanted with C++ N+ at low
energies (30 keV) and high-doses (5× 1017 at. cm− 2 for carbon ions and 6.7× 1017 at. cm …
energies (30 keV) and high-doses (5× 1017 at. cm− 2 for carbon ions and 6.7× 1017 at. cm …
Tuning the mechanical properties of poly-silicon film by surface modification using plasma treatment
WS Su, W Fang, MS Tsai - MRS Online Proceedings Library (OPL), 2004 - cambridge.org
The mechanical properties of thin film are very critical for the performance of MEMS devices.
Since Poly-silicon film is of great use in MEMS, this study investigates the surface …
Since Poly-silicon film is of great use in MEMS, this study investigates the surface …
High Quality of Ultra-Thin SiO x N y Films Prepared in Nitrous Oxide Ambients Using Thermal Low-Pressure Oxynitridation
GZ Liu, GS Hong, RC Zheng, XD Wu… - Materials and …, 2014 - Taylor & Francis
The thermal low-pressure oxynitridation of Si (100) in N2O has been studied for ultra-thin (<
5 nm) SiO x N y films. The nitrogen concentration and depth profiles were accurately …
5 nm) SiO x N y films. The nitrogen concentration and depth profiles were accurately …
Study of SHI induced recrystallization effects in SOI structures synthesized by nitrogen and oxygen ion implantation in silicon
Silicon oxynitride (SixOyNz) buried insulating layers were synthesized by implantation of
nitrogen (14N+) and oxygen (16O+) ions sequentially in the ratio 1: 1 at 150keV to ion …
nitrogen (14N+) and oxygen (16O+) ions sequentially in the ratio 1: 1 at 150keV to ion …