K Bespalova, T Nieminen, A Gabrelian… - Advanced Electronic …, 2023 - Wiley Online Library
A novel design that utilizes aluminum nitride (AlN) piezoelectric thin films deposited on vertical surfaces for lateral motion and sensing is a step toward emerging multi‐axial …
BY van der Wel, K van der Zouw… - The Journal of …, 2023 - ACS Publications
This work demonstrates intrinsic area-selective deposition of AlN films by thermal atomic layer deposition (ALD). Using sequential pulses of trimethylaluminum and NH3 at a …
E Österlund, H Seppänen, K Bespalova… - Journal of Vacuum …, 2021 - pubs.aip.org
Atomic layer deposition (ALD) of aluminum nitride (AlN) using in situ atomic layer annealing (ALA) is studied for microelectromechanical systems (MEMS). Effective piezoelectric in …
NA Strnad, WL Sarney, GB Rayner… - Journal of Vacuum …, 2022 - pubs.aip.org
We demonstrate an N 2 plasma-enhanced process for inducing (0001)-oriented ALD-grown AlN on planar substrates. We evaluate the impact of {111}-textured Pt as a growth template …
Functional flexible piezo-resonators are of vital interest for designing micro-electrometrical system (MEMS) based high-frequency wearable devices. The magnetoelectric (ME) …
S Liu, Y Li, J Tao, R Tang, X Zheng - Crystals, 2023 - mdpi.com
Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250° C …
T Liu, J Zhang, D Li, P Wu, J Zhang, H Dou… - IEEE Sensors …, 2023 - ieeexplore.ieee.org
Here, we report a differential ring array of piezoelectric micromachined ultrasonic transducers (pMUTs) for ultralong-range detection. Among them, the differential structure is …
T Nguyen, Y Fleming, P Bender, P Grysan… - … Applied Materials & …, 2021 - ACS Publications
This study reports a strong ME effect in thin-film composites consisting of nickel, iron, or cobalt foils and 550 nm thick AlN films grown by PE-ALD at a (low) temperature of 250° C …