Extending atomic layer deposition for use in next-generation piezoMEMS: Review and perspective

NA Strnad, DM Potrepka, BM Hanrahan… - Journal of Vacuum …, 2023 - pubs.aip.org
The objective of this work is to describe the current state of the rapidly evolving field of 3D
piezoelectric microelectromechanical systems (piezoMEMS), and where it needs to go to …

In‐Plane AlN‐based Actuator: Toward a New Generation of Piezoelectric MEMS

K Bespalova, T Nieminen, A Gabrelian… - Advanced Electronic …, 2023 - Wiley Online Library
A novel design that utilizes aluminum nitride (AlN) piezoelectric thin films deposited on
vertical surfaces for lateral motion and sensing is a step toward emerging multi‐axial …

Area-selective low-pressure thermal atomic layer deposition of aluminum nitride

BY van der Wel, K van der Zouw… - The Journal of …, 2023 - ACS Publications
This work demonstrates intrinsic area-selective deposition of AlN films by thermal atomic
layer deposition (ALD). Using sequential pulses of trimethylaluminum and NH3 at a …

Atomic layer deposition of AlN using atomic layer annealing—Towards high-quality AlN on vertical sidewalls

E Österlund, H Seppänen, K Bespalova… - Journal of Vacuum …, 2021 - pubs.aip.org
Atomic layer deposition (ALD) of aluminum nitride (AlN) using in situ atomic layer annealing
(ALA) is studied for microelectromechanical systems (MEMS). Effective piezoelectric in …

Plasma enhanced atomic layer deposition of textured aluminum nitride on platinized substrates for MEMS

NA Strnad, WL Sarney, GB Rayner… - Journal of Vacuum …, 2022 - pubs.aip.org
We demonstrate an N 2 plasma-enhanced process for inducing (0001)-oriented ALD-grown
AlN on planar substrates. We evaluate the impact of {111}-textured Pt as a growth template …

Functionality in frequency tuning of magnetoelectric heterostructure integrated highly flexible bulk acoustic wave resonator

P Kumar, A Pandey, S Dutta, D Kaur - Applied Physics Letters, 2023 - pubs.aip.org
Functional flexible piezo-resonators are of vital interest for designing micro-electrometrical
system (MEMS) based high-frequency wearable devices. The magnetoelectric (ME) …

Structural, surface, and optical properties of AlN thin films grown on different substrates by PEALD

S Liu, Y Li, J Tao, R Tang, X Zheng - Crystals, 2023 - mdpi.com
Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN)
thin films on Si (100), Si (111), and c-plane sapphire substrates at 250° C …

Airborne Rangefinding With pMUTs Array Using Differential Structure

T Liu, J Zhang, D Li, P Wu, J Zhang, H Dou… - IEEE Sensors …, 2023 - ieeexplore.ieee.org
Here, we report a differential ring array of piezoelectric micromachined ultrasonic
transducers (pMUTs) for ultralong-range detection. Among them, the differential structure is …

Magnetoelectric Functionality of Ni–Mn–In-Encapsulated AlN/Ni–Mn–In/Ni-Graded Heterostructure for Flexible Magnetic Field Sensor

P Kumar, D Arora, A Pandey, S Dutta… - ACS Applied Electronic …, 2023 - ACS Publications
Nowadays, flexible magnetoelectric (ME) heterostructures comprising lead-free
piezoelectrics are of considerable interest for commercializing wearable electronic devices …

Low-temperature growth of AlN films on magnetostrictive foils for high-magnetoelectric-response thin-film composites

T Nguyen, Y Fleming, P Bender, P Grysan… - … Applied Materials & …, 2021 - ACS Publications
This study reports a strong ME effect in thin-film composites consisting of nickel, iron, or
cobalt foils and 550 nm thick AlN films grown by PE-ALD at a (low) temperature of 250° C …