The growing demand for electronic devices, smart devices, and the Internet of Things
constitutes the primary driving force for marching down the path of decreased critical …

The semiconductor industry is exploring new metrology techniques capable of meeting the
future requirement to characterize three-dimensional structure where the critical dimensions …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

Semiconductor devices continue to shrink in size with every generation. These ever smaller
structures are challenging the resolution limits of current analytical and inline metrology …

With the ever-increasing demand for sub-10 nm integrated circuit chips in the fields such as
consumer electronics, interconnect hardware, and electronic medical equipment, the impact …

A line grating prepared via a self-aligned quadruple patterning method was measured using
critical dimension small angle x-ray scattering. A Monte Carlo Markov chain algorithm was …

Over the past 2 years, we have developed a common optical-path, 532 nm laser epi-
illumination diffraction phase microscope (epi-DPM) and successfully applied it to detect …

A highly sensitive laser-based quantitative phase imaging tool, using an epi-illumination
diffraction phase microscope, has been developed for silicon wafer defect inspection. The …

Birefringence, an inherent characteristic of optically anisotropic materials, is widely utilized
in various imaging applications ranging from material characterizations to clinical diagnosis …

Critical dimension measurement accuracy in optical scatterometry relies not only on the
systematic noise level of instruments and the reliability of forward modeling algorithms, but …