A lateral magnetotransistor structure with a linear response to the magnetic field

L Ristic, T Smy, HP Baltes - IEEE transactions on electron …, 1989 - ieeexplore.ieee.org
An experimental study and analytical model of a novel magnetotransistor are presented.
This device displays some very promising features. A linear response to the magnetic field is …

[HTML][HTML] 4H–SiC vertical magnetotransistor with microtesla detectivity up to 500° C

H Okeil, G Wachutka - Applied Physics Letters, 2024 - pubs.aip.org
In this Letter, we demonstrate the operation of an in-plane magnetic field sensitive 4H–SiC
vertical magnetotransistor over a wide range of temperatures, ranging from room …

2-D differential folded vertical Hall device fabricated on a p-type substrate using CMOS technology

GM Sung, CP Yu - IEEE Sensors Journal, 2013 - ieeexplore.ieee.org
This paper investigates a two-dimensional (2-D) differential folded vertical Hall device (VHD)
fabricated using standard 0.35 μm CMOS technology. To minimize the cross-coupling noise …

The Hall effect in integrated magnetotransistors

A Nathan, K Maenaka, W Allegretto… - IEEE transactions on …, 1989 - ieeexplore.ieee.org
Computations using a two-dimensional numerical model as well as experimental data
obtained from Hall probe measurements indicate the presence of a weak Hall field along the …

Magnetotransistor Based on the Carrier Recombination—Deflection Effect

C Leepattarapongpan, T Phetchakul… - IEEE Sensors …, 2009 - ieeexplore.ieee.org
This paper presents the three-terminal magnetotransistor based on the carrier
recombination-deflection effect. Three-terminal magnetotransistor can detect vertical and …

Universal magneto-operational amplifier (MOP)

K Maenaka, H Okada, T Nakamura - Sensors and Actuators A: Physical, 1990 - Elsevier
A new class of integrated magnetic sensors, a magneto-operational amplifier (MOP) is
presented. The MOP is a universal magnetic sensor which can be used for many purposes …

3-D magnetic field sensor realized as a lateral magnetotransistor in CMOS technology

LJ Ristić, MT Doan, M Paranjape - Sensors and Actuators A: Physical, 1990 - Elsevier
A study of a CMOS lateral magnetotransistor structure designed to sense all three
components of a magnetic field is presented. The device has four collector pairs and uses a …

Two-dimensional folded CMOS Hall device with interacting lateral magnetotransistor and magnetoresistor

CP Yu, GM Sung - Sensors and Actuators A: Physical, 2012 - Elsevier
This study investigates a two-dimensional folded Hall device fabricated by standard 0.35-μm
CMOS process. The effective conduction length is shortened by folding the device, and the …

2-D integrated magnetic field sensor in CMOS technology

L Ristic, MT Doan, M Paranjape - Proceedings of the 32nd …, 1989 - ieeexplore.ieee.org
A silicon sensor capable of measuring two components of the magnetic field in the plane of
chip is presented. The device is based on lateral magnetotransistor action, has two collector …

Highly sensitive magnetotransistor with new topology

A Nagy, H Trujillo - Sensors and Actuators A: Physical, 1998 - Elsevier
In this paper a new highly sensitive lateral magnetotransistor (LMT) activated by an
orthogonal magnetic field is presented. The search to reduce magnetic response loss led to …