Terahertz quantum-cascade lasers

BS Williams - Nature photonics, 2007 - nature.com
Six years after their birth, terahertz quantum-cascade lasers can now deliver milliwatts or
more of continuous-wave coherent radiation throughout the terahertz range—the spectral …

Si/SiGe heterostructures: from material and physics to devices and circuits

DJ Paul - Semiconductor science and technology, 2004 - iopscience.iop.org
Silicon germanium (SiGe) has moved from being a research material to accounting for a
small but significant percentage of manufactured semiconductor devices. This percentage is …

Will silicon be the photonic material of the third millenium?

L Pavesi - Journal of Physics: Condensed Matter, 2003 - iopscience.iop.org
Silicon microphotonics, a technology which merges photonics and silicon microelectronic
components, is rapidly evolving. Many different fields of application are emerging …

[图书][B] Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

JD Cressler, S Monfray, G Freeman, D Friedman… - 2018 - taylorfrancis.com
An extraordinary combination of material science, manufacturing processes, and innovative
thinking spurred the development of SiGe heterojunction devices that offer a wide array of …

High-temperature operation of terahertz quantum cascade laser sources

MA Belkin, QJ Wang, C Pflugl… - IEEE Journal of …, 2009 - ieeexplore.ieee.org
Terahertz (THz) quantum cascade lasers (QCLs) are currently the most advanced
electrically pumped semiconductor lasers in the spectral range 1-5 THz. However, their …

The progress towards terahertz quantum cascade lasers on silicon substrates

DJ Paul - Laser & Photonics Reviews, 2010 - Wiley Online Library
A review is presented of work over the last 10 years which has been aimed at trying to
produce a Si‐based THz quantum cascade laser. Potential THz applications and present …

Interface-roughness-induced broadening of intersubband electroluminescence in p-SiGe and n-GaInAs∕ AlInAs quantum-cascade structures

S Tsujino, A Borak, E Müller, M Scheinert… - Applied Physics …, 2005 - pubs.aip.org
The effect of intrasubband interface roughness scattering on intersubband transition
linewidths in double-quantum-well and quantum-cascade (QC) structures is studied. In n …

SiGe quantum well infrared photodetectors on strained-silicon-on-insulator

J Aberl, M Brehm, T Fromherz, J Schuster, J Frigerio… - Optics …, 2019 - opg.optica.org
We demonstrate p-type SiGe quantum well infrared photodetectors (QWIPs) on a strained-
silicon-on-insulator (sSOI) substrate. The sSOI system allows strain-balancing between the …

SiGe nanomembrane quantum-well infrared photodetectors

H Durmaz, P Sookchoo, X Cui, RB Jacobson… - ACS …, 2016 - ACS Publications
SiGe quantum wells are promising candidates for the development of intersubband light
emitters and photodetectors operating at mid-and far-infrared wavelengths. By virtue of their …

Broadly tunable single-mode mid-infrared quantum cascade lasers

B Meng, QJ Wang - Journal of Optics, 2015 - iopscience.iop.org
In this paper, we review the recent progress in broadly tunable single-mode mid-infrared
quantum cascade lasers (QCLs). With a brief introduction on various applications of broadly …