Today's explosion of data urgently requires memory technologies capable of storing large
volumes of data in shorter time frames, a feat unattainable with Flash or DRAM. Intel Optane …

Nonvolatile phase-change memory has been successfully commercialized, but further
density scaling below 10 nanometers requires compositionally and structurally …

Cross-point array architecture offers a path toward low-cost storage-class memory (SCM).
However, it requires a selector, such as an ovonic threshold switch (OTS) in series with the …

High endurance ovonic threshold switch (OTS, here, TeAsGeSiSe-based) is integrated with
phase change memory (PCM, here, doped Ge2Sb2Te5) to form a 3-D stackable pillar-type …

Disorder‐induced electronic localization is responsible for the OFF state of the Ovonic
threshold switching (OTS) device, which is an indispensable component in the present 3D …

We present a finite-element model for the confined-structure device integrating a phase
change memory (PCM) and an ovonic threshold switch (OTS) selector. In this model, the …

In this article, we present the structural investigation by Raman spectroscopy of GeSbSeN
ovonic threshold switching (OTS) material once integrated in selector devices featuring a top …

Chemical mechanical planarization (CMP) is receiving a growing interest in the fabrication
of phase change memory in order to achieve a highly scaled confined cell structure and …

The success of memory technology is of vital importance in order to handle emerging mass
amount of data in our daily lives. Let us take one example here: The IBM summit is the …

In this study, we report on the subthreshold bias-induced threshold voltage shift (SITS)
phenomenon of an ovonic threshold switch (OTS) that can occur during array inhibit …