Polysiloxanes and materials based on them (silicone materials) are of great interest in
optoelectronics due to their high flexibility, good film-forming ability, and optical …

The world needs economical and sustainable alternate energy sources to combat the
irreversible phenomenon like global warming. Solar photovoltaic technology, which converts …

Flexible, substrate-free nanowire (NW) devices are desirable to overcome the extremely
challenging task of integrating III–V or III–N semiconductor devices such as LEDs and lasers …

Controlled growth of heterostructured nanowires and mechanisms of their formation have
been actively studied during the last decades due to perspectives of their implementation …

We propose and demonstrate both flexible and stretchable blue light-emitting diodes based
on core/shell InGaN/GaN quantum well microwires embedded in polydimethylsiloxane …

This paper reviews our recent research about the formation and optical characteristics of
GaN: Eu/GaN nanowires (NWs) by metalorganic vapor phase epitaxy for application in GaN …

Inefficient Mg-induced p-type doping has been remained a major obstacle in the
development of GaN-based electronic devices for solid-state lighting and power …

Flexible optoelectronic structures are required in a wide range of applications. Large scale
modified silicone-embedded n-GaP nanowire arrays of a record 6 µm thin membranes were …

We report on the demonstration of GaN: Eu/GaN nanowire (NW) LEDs grown by
organometallic vapor phase epitaxy (OMVPE). The GaN: Eu/GaN NW LED structures with a …

Vertical aligned GaN nanowall networks (NWN) have been grown on sapphire (0 0 0 1)
substrates using laser assisted molecular beam epitaxy (LMBE) by tuning the sapphire pre …