A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness
The technical progress of Ga 2 O 3 power diodes is now stuck at a critical point where a lack
of performance evaluation and reliability validation at the system-level applications seriously …
of performance evaluation and reliability validation at the system-level applications seriously …
Recent progress of Ga2O3 power technology: large-area devices, packaging and applications
Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …
Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability
Ultrawide-bandgap gallium oxide (Ga 2 O 3) devices have recently emerged as promising
candidates for power electronics; however, the low thermal conductivity (k T) of Ga 2 O 3 …
candidates for power electronics; however, the low thermal conductivity (k T) of Ga 2 O 3 …
A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …
devices are under way to realize next-generation power conversion and wireless …
70-μm-Body Ga2O3 Schottky Barrier Diode With 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency
In this letter, we report 9-mm 2 Ga 2 O 3 Schottky barrier diodes (SBDs) with a thin-body
thickness of 70. By implementing substrate thinning strategy and dual field plate structures …
thickness of 70. By implementing substrate thinning strategy and dual field plate structures …
TCAD-augmented machine learning with and without domain expertise
In this article, using experimental data, we demonstrate that the technology computer-aided
design (TCAD) is a very cost-effective tool to generate the data to build machine learning …
design (TCAD) is a very cost-effective tool to generate the data to build machine learning …
Low thermal resistance (0.5 K/W) Ga₂O₃ Schottky rectifiers with double-side packaging
The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga
2 O 3 power and RF devices. Despite many simulation studies, there is no experimental …
2 O 3 power and RF devices. Despite many simulation studies, there is no experimental …