Nano-photodiodes with a subwavelength active area using the optical near-field enhanced
by surface plasmon resonance are proposed. We fabricated a Si Schottky photodiode that …

In order to continue to fulfill the ever-increasing demands on ultra-fast microprocessors, a
revolution in silicon photonics communication is necessary. Traditional CMOS, FinFET, and …

In this work, a numerical investigation is conducted to examine the complex interplay of
permeability, Darcy effect, and heat transfer within pyramid-shaped structures. The present …

In this paper, we present the design of a silicon optoelectronic device capable of speeding
up processing capabilities. The data in this device are electronic, while the modulation …

As part of the efforts to enhance the near-field scanning optical microscopy and the detection
of evanescent waves, a silicon Schottky diode, shaped as a truncated trapezoid …

A type of silicon photodiode has been designed and simulated to probe the optical near field
and detect evanescent waves. These waves convey subwavelength resolution. This …

In this paper we present the fabrication process and the experimental proof of principle of a
vertical Silicon On Insulator Photo Activated Modulator (vertical SOI-PAM). In this device the …

Ultra-fast electrical switches activated with an optical-polarized light trigger, also called
photo-polarized activated electrical switches, are presented. A set of new transistor circuits is …

Silicon-based photodetector sharing subwavelength aperture and shaped as a truncated
conical-probe, has been electrically and optically simulated. Designed for NSOM, it may …

A near-field scanning optical microscope (NSOM) probe based on CMOS-MEMS technology
is proposed. The side pin-hole photodetector and the on-chip transimpedance amplifier …