[HTML][HTML] Diffusion of n-type dopants in germanium

A Chroneos, H Bracht - Applied Physics Reviews, 2014 - pubs.aip.org
Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

Seventy-five years since the point-contact transistor: Germanium revisited

EN Sgourou, A Daskalopulu, LH Tsoukalas… - Applied Sciences, 2022 - mdpi.com
The advent of the point-contact transistor is one of the most significant technological
achievements in human history with a profound impact on human civilization during the past …

Interaction of A-centers with isovalent impurities in silicon

A Chroneos, CA Londos - Journal of Applied Physics, 2010 - pubs.aip.org
An A-center is an oxygen interstitial atom near a lattice vacancy and is one of the most
common impurity-defect pairs in Czochralski-grown silicon crystals. In the present study …

Impurity diffusion, point defect engineering, and surface/interface passivation in germanium

A Chroneos, U Schwingenschlögl… - Annalen der …, 2012 - Wiley Online Library
In recent years germanium has been emerging as a mainstream material that could have
important applications in the microelectronics industry. The principle aim of this study is to …

Special quasirandom structures for binary/ternary group IV random alloys

A Chroneos, C Jiang, RW Grimes… - Chemical Physics …, 2010 - Elsevier
Simulation of defect interactions in binary/ternary group IV semiconductor alloys at the
density functional theory level is difficult due to the random distribution of the constituent …

Extrinsic doping in silicon revisited

U Schwingenschlögl, A Chroneos, C Schuster… - Applied Physics …, 2010 - pubs.aip.org
Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by
Pauling electronegativities and can only be reconciled if we no longer regarding dopant …

Defect engineering strategies for germanium

A Chroneos - Journal of Materials Science: Materials in Electronics, 2013 - Springer
After years of neglect germanium is emerging as a mainstream material for microelectronics
applications. This is partially due to the introduction of high-k dielectrics that have allowed …

A density functional study of small neutral, anionic, and cationic indium clusters Inn, Inn−, and Inn+ (n= 2–15)

S Shi, Y Liu, Y Li, B Deng, C Zhang, G Jiang - … and Theoretical Chemistry, 2016 - Elsevier
The density functional theory (DFT) is used to investigate the geometries, relative stabilities,
electronic properties and natural population analysis for small neutral, anionic, and cationic …

Structural and electrical properties of In-implanted Ge

R Feng, F Kremer, DJ Sprouster, S Mirzaei… - Journal of Applied …, 2015 - pubs.aip.org
We report on the effects of dopant concentration on the structural and electrical properties of
In-implanted Ge. For In concentrations of≤ 0.2 at.%, extended x-ray absorption fine structure …

Dopant-defect interactions in Ge: Density functional theory calculations

A Chroneos - Materials science in semiconductor processing, 2012 - Elsevier
Germanium is being actively considered by the semiconductors community as a mainstream
material for nanoelectronics application. This is driven by its advantageous materials …