This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …

Although silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs)
are commercially available, bias temperature instability (BTI) defined as shifts in V th in SiC …

In our previous work, we demonstrated the world's first inversion-type p-channel diamond
metal–oxide–semiconductor field-effect transistor (MOSFET). However, it exhibited low …

This article reviews the state of the art in inversion-type p-channel diamond MOSFETs. We
successfully developed the world's first inversion-channel homoepitaxial and heteroepitaxial …

Measurement and optimization of interface states in metal oxide semiconductors are the
premise of building high-performance and high-reliability field-effect transistors (FETs) …

The phonon-limited mobility in 4H-silicon carbide (SiC) inversion channels was precisely
evaluated by employing ultralow net doping concentrations. The measured mobility in the …

This paper reviews the feasibility of the state-of-the-art electrical techniques adopted from Si
technology for characterization of SiC MOS devices. The inability of these conventional …

Studying the electrical and structural properties of the interface of the gate oxide (SiO 2) with
silicon carbide (4H-SiC) is a fundamental topic, with important implications for …

Deep levels near the surface of 4H-SiC after dry oxidation were investigated. A large and
broad peak appeared in the low-temperature range of deep level transient spectroscopy …

Low temperature wet-O2 annealing process for enhancement of inversion channel mobility and
suppression of Vfb instability on 4H-SiC (0001) Si-face | Applied Physics Letters | AIP Publishing …