We present the development of a device-level linearization technique and its applications in
broadband power amplifiers (PAs). The proposed topology firstly combines derivative …

A 60 GHz wideband power amplifier (PA) is fabricated in a standard CMOS SOI 65 nm
process. The PA is based on two cascode stages. Input, output and inter-stage matching use …

Using ST 0.13-mum CMOS technology, a class A power amplifier has been developed for
the global system for mobile communication in Europe. To solve the problem of low …

In this paper, a power amplifier (PA) with gain control is presented for 2.4 GHz applications.
The power gain can be digitally controlled in six steps by the combination of three bits. This …

This paper presents the design of a one watt-level RF CMOS Power Amplifier (PA) based on
power combining transformers PSCT in 0.13 µm technology using ADS 2011.10. The PA …

This article presents a 2‐GHz fully‐differential CMOS power amplifier (PA) fabricated in a
standard 0.35‐μm RF CMOS process. Virtual grounds are introduced at both drive‐stage …

文中介绍了一个基于TSMC0. 18μmCMOS 工艺, 可应用于802.11 a 无线局域网标准的功率
放大器设计. 该电路采用三级全差分结构, 驱动级采用电阻并联负反馈网络来保证稳定性. 在3.3 …

My foremost appreciation goes to Professor Berroth who has given me the chance to finish
my PhD at the Institute of Electrical and Optical Communications Engineering, University of …

Over time, scientists and engineers have developed technology that has improved everyday
living. For every invention, they have found to reinvent it and create a better version of it. An …

This paper presents a driver amplifier for PA across 8G-12GHz. In order to obtain high output
power, the work uses a large number of SiGe bipolar transistors and selects a higher DC …