Application of photoreflectance to advanced multilayer structures for photovoltaics
DF Marrón, E Cánovas, I Artacho, CR Stanley… - Materials Science and …, 2013 - Elsevier
Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic
properties of semiconductor materials and structures. It is a simple non-destructive and …
properties of semiconductor materials and structures. It is a simple non-destructive and …
Impact of Cu–Au type domains in high current density CuInS2 solar cells
A Moreau, C Insignares-Cuello, L Escoubas… - Solar Energy Materials …, 2015 - Elsevier
In this work, a series of stain steel 15× 15 cm 2 CuInS 2 solar cells with efficiencies close to
the record one for this kind of devices, are analyzed. Through a careful and comprehensive …
the record one for this kind of devices, are analyzed. Through a careful and comprehensive …
[PDF][PDF] 半绝缘GaAs 的双调制反射光谱研究
刘雪璐， 吴江滨， 罗向东， 谭平恒 - 物理学报, 2017 - wulixb.iphy.ac.cn
半导体材料电子能带结构的确定对研究其物理性质及其在半导体器件方面的应用有重要意义.
光调制反射光谱是一种无损和高灵敏度的表征半导体材料电子能带结构的光学手段 …
光调制反射光谱是一种无损和高灵敏度的表征半导体材料电子能带结构的光学手段 …
Detection and measurement of electroreflectance on quantum cascade laser device using Fourier transform infrared microscope
We demonstrate the use of a Fourier Transform Infrared microscope system to detect and
measure electroreflectance (ER) from mid-infrared quantum cascade laser (QCL) device. To …
measure electroreflectance (ER) from mid-infrared quantum cascade laser (QCL) device. To …
Supercontinuum source as a probing beam in photoreflectance and photoacoustic spectroscopy
J Kopaczek, SJ Zelewski, R Kudrawiec - Measurement, 2019 - Elsevier
In this paper we show a proof of concept for the application of the supercontinuum light
source as a probing beam in photoreflectance (PR) and photoacoustic (PA) spectroscopies …
source as a probing beam in photoreflectance (PR) and photoacoustic (PA) spectroscopies …
Ga and In incorporation rates in Ga1− xInxAs growth by chemical beam epitaxy
GaAs, InAs and Ga1− xInxAs layers were grown by chemical beam epitaxy (CBE) using
triethylgallium, trimethylindium and tertiarybutylarsine as precursors for Ga, In and As …
triethylgallium, trimethylindium and tertiarybutylarsine as precursors for Ga, In and As …
Understanding CIGS device performances through photoreflectance spectroscopy
A Moreau, D Fuertes-Marron, I Artacho… - Thin Film Solar …, 2012 - spiedigitallibrary.org
Cu (In 1-x, Ga x) S 2 was studied using photoreflectance spectroscopy. In this study, efforts
are devoted to optimizing PR set-up for measuring CIGS grown by electrodeposition: issues …
are devoted to optimizing PR set-up for measuring CIGS grown by electrodeposition: issues …
Photoreflectance device
A Moreau, V Bermudez, L Escoubas… - US Patent 9,377,300, 2016 - Google Patents
A photoreflectance device for characterizing a rough surface includes a pump beam emitter
to emit a pump beam; a probe beam emitter to emit a probe beam; a detector to detect the …
to emit a pump beam; a probe beam emitter to emit a probe beam; a detector to detect the …