Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors
Molybdenum disulfide (MoS2) has distinctive electronic and mechanical properties which
make it a highly prospective material for use as a channel in upcoming nanoelectronic …
make it a highly prospective material for use as a channel in upcoming nanoelectronic …
Comprehensive analytical model for exploring the dominant scattering mechanism of two-dimensional MoS2 FETs
This work proposes a comprehensive analytical model for two-dimensional molybdenum
disulfide (MoS2) field-effect transistors (FETs). This model incorporates single-particle and …
disulfide (MoS2) field-effect transistors (FETs). This model incorporates single-particle and …
A New Approach to Modeling Ultrashort Channel Ballistic Nanowire GAA MOSFETs
H Cheng, Z Yang, C Zhang, C Xie, T Liu, J Wang… - Nanomaterials, 2022 - mdpi.com
We propose a numerical compact model for describing the drain current in ballistic mode by
using an expression to represent the transmission coefficients for all operating regions. This …
using an expression to represent the transmission coefficients for all operating regions. This …
Quantum modelling of nanoscale silicon gate-all-around field effect transistor
The paper introduces an analytical model for gate all around (GAA) or Surrounding Gate
Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum …
Metal Oxide Semiconductor Field Effect Transistor (SG-MOSFET) inclusive of quantum …
[PDF][PDF] Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors. Micromachines 2023, 14, 1235
Molybdenum disulfide (MoS2) has distinctive electronic and mechanical properties which
make it a highly prospective material for use as a channel in upcoming nanoelectronic …
make it a highly prospective material for use as a channel in upcoming nanoelectronic …