In this review, the structural, mechanical, thermal, and chemical properties of substrates
used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films …

This article provides an overview of recent development of sputtering method for high-quality
III-nitride semiconductor materials and devices. Being a mature deposition technique widely …

With the increasing requirements for microelectromechanical systems (MEMS) regarding
stability, miniaturization and integration, novel materials such as wide band gap …

We present a comprehensive overview of the optical properties of zinc-blende GaN. By a
variety of different methods, such as temperature-dependent photoluminescence …

We combine the effect of the electron-electron and electron-phonon interactions to study the
electronic and optical properties of zb-GaN. We show that only by treating the two effects at …

Hexagonal GaN films have been grown on Si (100) substrates by employing a sputtered AlN
buffer layer followed by another high-temperature metalorganic chemical vapor deposition …

Gallium nitride (GaN)-based light-emitting diodes (LEDs) are highly energy efficient and
their widespread usage in lighting can induce significant worldwide electricity savings. To …

Abstract n-GaN/p-GaAs heterojunctions were fabricated by plasma-assisted molecular beam
epitaxy (PA-MBE). The fabrication was carried out by the growth of n-type cubic GaN on p …

The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by
plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) …

Misfit defects in a 3 C-SiC/Si (001) interface were investigated using a 200 kV high-
resolution electron microscope with a point resolution of 0.194 nm. The [110] high-resolution …