Despite the tremendous progress on wide-bandgap materials in the last few decades,
devices made of these materials are still far from their maximum theoretical performance …

Electron effective mass is a fundamental material parameter defining the free charge carrier
transport properties, but it is very challenging to be experimentally determined at high …

Ultra-thin high-Al content barrier layers can enable improved gate control and high-
frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the …

Al x Ga 1− x N/GaN high-electron-mobility transistor (HEMT) structures are key components
in electronic devices operating at gigahertz or higher frequencies. In order to optimize such …

Group-III nitrides have transformed solid-state lighting and are strategically positioned to
revolutionize high-power and high-frequency electronics. To drive this development forward …

Herein, the temperature‐dependent characteristics of AlN/Al0. 5Ga0. 5N high electron
mobility transistors (HEMTs) with highly degenerate n‐type GaN (d‐GaN) ohmic contacts …

Group-III nitrides have transformed solid-state lighting and are strategically positioned to
revolutionize high-power and high-frequency electronics. To drive this development forward …

Park et al. from Samsung Advanced Institute of Technology demonstrated a new passivation
technique based on N2O plasma treatment of the access region being of lateral p-GaN …