Bandgap engineering of two-dimensional semiconductor materials

A Chaves, JG Azadani, H Alsalman… - npj 2D Materials and …, 2020 - nature.com
Semiconductors are the basis of many vital technologies such as electronics, computing,
communications, optoelectronics, and sensing. Modern semiconductor technology can trace …

Phase engineering of 2D materials

D Kim, J Pandey, J Jeong, W Cho, S Lee… - Chemical …, 2023 - ACS Publications
Polymorphic 2D materials allow structural and electronic phase engineering, which can be
used to realize energy-efficient, cost-effective, and scalable device applications. The phase …

Single-crystalline van der Waals layered dielectric with high dielectric constant

C Zhang, T Tu, J Wang, Y Zhu, C Tan, L Chen, M Wu… - Nature materials, 2023 - nature.com
The scaling of silicon-based transistors at sub-ten-nanometre technology nodes faces
challenges such as interface imperfection and gate current leakage for an ultrathin silicon …

MoS2 transistors with 1-nanometer gate lengths

SB Desai, SR Madhvapathy, AB Sachid, JP Llinas… - Science, 2016 - science.org
Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths
because of severe short channel effects. As an alternative to Si, certain layered …

van der Waals layered materials: opportunities and challenges

DL Duong, SJ Yun, YH Lee - ACS nano, 2017 - ACS Publications
Since graphene became available by a scotch tape technique, a vast class of two-
dimensional (2D) van der Waals (vdW) layered materials has been researched intensively …

[PDF][PDF] High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe2 FETs

Y Zhao, J Qiao, Z Yu, P Yu, K Xu, SP Lau… - Advanced …, 2017 - researchgate.net
DOI: 10.1002/adma. 201604230 predicted phonon-limited value (400 cm2 V− 1 s− 1).[6–8]
To get the mobility close to the intrinsic value, it typically requires subtle contact and …

Electrical characterization of 2D materials-based field-effect transistors

SB Mitta, MS Choi, A Nipane, F Ali, C Kim… - 2D …, 2020 - iopscience.iop.org
Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

A Nourbakhsh, A Zubair, RN Sajjad, A Tavakkoli KG… - Nano …, 2016 - ACS Publications
Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-
effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large …

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

X Wang, P Wang, J Wang, W Hu, X Zhou, N Guo… - arXiv preprint arXiv …, 2015 - arxiv.org
Photodetectors based on two dimensional materials have attracted growing interest.
However, the sensitivity is still unsatisfactory even under high gate voltage. Here we …

Structural and quantum-state phase transitions in van der Waals layered materials

H Yang, SW Kim, M Chhowalla, YH Lee - Nature Physics, 2017 - nature.com
Van der Waals layered transition metal dichalcogenides can exist in many different atomic
and electronic phases. Such diverse polymorphisms not only provide a route for …