A roadmap for electronic grade 2D materials
Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific
and industrial promise, providing a broad materials platform for scientific investigation, and …
and industrial promise, providing a broad materials platform for scientific investigation, and …
Atomic layer deposition of metal oxides and chalcogenides for high performance transistors
Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …
thin film materials at the nanoscale for applications in transistors. This review …
Heterogeneous stacking of reduced graphene oxide on ZnO nanowires for NO2 gas sensors with dramatically improved response and high sensitivity
Graphene or two-dimensional materials have been intensively studied as a new generation
of gas sensing materials due to their large specific surface area and high mobility. However …
of gas sensing materials due to their large specific surface area and high mobility. However …
Direct optoelectronic imaging of 2D semiconductor–3D metal buried interfaces
The semiconductor–metal junction is one of the most critical factors for high-performance
electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage …
electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage …
Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions
We study a low voltage short pulse operating multilevel memory based on van der Waals
heterostack (HS) n-MoSe2/n-MoS2 channel field-effect transistors (FETs). Our HS memory …
heterostack (HS) n-MoSe2/n-MoS2 channel field-effect transistors (FETs). Our HS memory …
Experimental Determination of the Ionization Energies of MoSe2, WS2, and MoS2 on SiO2 Using Photoemission Electron Microscopy
The values of the ionization energies of transition metal dichalcogenides (TMDs) are
needed to assess their potential usefulness in semiconductor heterojunctions for high …
needed to assess their potential usefulness in semiconductor heterojunctions for high …
Ultrafast Formation of Charge Transfer Trions at Molecular‐Functionalized 2D MoS2 Interfaces
In this work, we investigate trion dynamics occurring at the heterojunction between
organometallic molecules and a monolayer transition metal dichalcogenide (TMD) with …
organometallic molecules and a monolayer transition metal dichalcogenide (TMD) with …
Orientation of Cobalt-Phthalocyanines on Molybdenum Disulfide: Distinguishing between Single Crystals and Small Flakes
P Haizmann, E Juriatti, M Klein, K Greulich… - The Journal of …, 2024 - ACS Publications
Heterostructures consisting of transition metal dichalcogenides (TMDCs) and organic
molecules are currently of enormous interest for a variety of applications. Comparably …
molecules are currently of enormous interest for a variety of applications. Comparably …
Resistive Switching in CsPbBr3 (0D)/MoS2 (2D) Heterojunction System: Trap-Controlled Space Charge Limited Transport Mechanism
AP Deshmukh, K Patil, S Ogale… - ACS Applied Electronic …, 2023 - ACS Publications
Electronic phenomena at the interfaces of mixed-dimensional systems are interesting as
well as intriguing because of the distinctly differing electronic states' spectra on both sides of …
well as intriguing because of the distinctly differing electronic states' spectra on both sides of …
Layer-Dependent Photoinduced Electron Transfer in 0D–2D Lead Sulfide/Cadmium Sulfide–Layered Molybdenum Disulfide Hybrids
We demonstrate layer-dependent electron transfer between core/shell PbS/CdS quantum
dots (QDs) and layered MoS2 via energy band gap engineering of both the donor (QDs) and …
dots (QDs) and layered MoS2 via energy band gap engineering of both the donor (QDs) and …