At present, the commercially dominant and rapidly expanding PV‐device technology is
based on the passivated emitter and rear cell (PERC) design developed at UNSW …

In this work, we demonstrate a form of minority carrier degradation on n-type Cz silicon that
affects both the bulk and surface related lifetimes. We identify three key behaviors of the …

At present, passivated emitter and rear cell (PERC) solar cells dominate the photovoltaic
industry. However, light and elevated temperature-induced degradation (LeTID) is an …

Light-and elevated temperature-induced degradation (LeTID) has been extensively studied
on p-type silicon materials with increasing evidence suggesting the involvement of …

The root cause of light-and elevated temperature-induced degradation (LeTID) in
multicrystalline silicon p-type passivated emitter and rear cell (PERC) devices is still …

Low levelized cost of electricity (LCOE) has been identified as critical for widespread
adoption of photovoltaics (PV) without subsidies. Maintaining decades-long high-energy …

Hydrogen has been long known for its ability to passivate defects in silicon devices.
However, multiple recent studies on understanding the mechanism behind light-and …

Hydrogen (H) is thought to be strongly involved in the light and elevated temperature-
induced degradation observed predominantly in p-type silicon wafers, but the nature of the …

Recently, an n-type multi-crystalline silicon (mc-Si) was observed to be susceptible to
degradation under illumination at elevated temperatures with similarities to carrier-induced …

Light and elevated temperature induced degradation (LeTID) is currently a severe issue in
crystalline silicon photovoltaics, which has led to numerous efforts to both understand the …