Behavioral approach to SiC MPS diode electrothermal model generation
A comprehensive approach to generation of electrothermal models of silicon carbide (SiC)
power Schottky diodes is presented. Both the electrical and thermal parts of the model are …
power Schottky diodes is presented. Both the electrical and thermal parts of the model are …
Electrothermal model of coupled inductors with nanocrystalline cores
The paper proposes a new electrothermal model of a coupled inductor containing a
nanocrystalline core dedicated to the analysis of electrical energy conversion systems. The …
nanocrystalline core dedicated to the analysis of electrical energy conversion systems. The …
Review of commercial SiC MOSFET models: Validity and accuracy
A Stefanskyi, Ł Starzak… - 2017 MIXDES-24th …, 2017 - ieeexplore.ieee.org
SPICE models of four silicon carbide power MOSFETs provided by present commercial
manufacturers have been experimentally validated and their accuracy has been assessed …
manufacturers have been experimentally validated and their accuracy has been assessed …
Compact electrothermal model of laboratory made GaN Schottky diodes
Purpose The purpose of this paper is to propose a simple electrothermal model of GaN
Schottky diodes, and its usefulness for circuit-level electrothermal simulation of laboratory …
Schottky diodes, and its usefulness for circuit-level electrothermal simulation of laboratory …
A Simple Electrothermal Compact Model for SiC MPS Diodes Including the Snapback Mechanism
V d'Alessandro, V Terracciano… - … Investigations of ICs …, 2023 - ieeexplore.ieee.org
In this paper, a simple electrothermal compact model for the static behavior of SiC MPS
diodes is developed in the form of a SPICE-compatible subcircuit. The model is suited to …
diodes is developed in the form of a SPICE-compatible subcircuit. The model is suited to …
Recent research in VLSI, MEMS and power devices with practical application to the ITER and DREAM projects
A Napieralski, C Maj, M Szermer, P Zajac… - Facta universitatis …, 2014 - doiserbia.nb.rs
Several MEMS (Micro Electro-Mechanical Systems) devices have been analysed and
simulated. The new proposed model of SiC MPS (Merged PIN-Schottky) diodes is in full …
simulated. The new proposed model of SiC MPS (Merged PIN-Schottky) diodes is in full …
The scope of applicability of DPL model to the heat transfer in electronic devices and integrated circuits
M Zubert, T Raszkowski, A Samson… - … Investigations of ICs …, 2017 - ieeexplore.ieee.org
This paper presents the scope of applicability of Dual-Phase-Lag heat transfer model in
electronic devices as-well-as in integrated circuits. Moreover, the investigation of necessity …
electronic devices as-well-as in integrated circuits. Moreover, the investigation of necessity …
The behavioral approach to silicon carbide power components modeling
The behavioral and circuit equivalent models applied to silicon carbide semiconductor
power devices have been presented. The MOSFET and Merged PiN Schottky diode (MPS) …
power devices have been presented. The MOSFET and Merged PiN Schottky diode (MPS) …
Effect of tunneling current on the reverse IV characteristics of In, Al-pWSe2 Schottky diodes
A Bobby, PS Gupta, BK Antony - The European Physical Journal …, 2012 - cambridge.org
The reverse IV characteristics of In-pWSe2 and Al-pWSe2 Schottky barrier diodes were
investigated at room temperature with two different metal thicknesses. A model is presented …
investigated at room temperature with two different metal thicknesses. A model is presented …
[引用][C] Przyrządy półprzewodnikowe z węglika krzemu: pomiary, modelowanie i aplikacje
J Zarębski, D Bisewski, J Dąbrowski… - Elektronika …, 2014 - yadda.icm.edu.pl
W artykule zaprezentowano wybrane wyniki prac naukowo-badawczych prowadzonych w
Katedrze Elektroniki Morskiej (KEM) Akademii Morskiej w Gdyni w zakresie pomiarów oraz …
Katedrze Elektroniki Morskiej (KEM) Akademii Morskiej w Gdyni w zakresie pomiarów oraz …