Phase change memory technology

GW Burr, MJ Breitwisch, M Franceschini… - Journal of Vacuum …, 2010 - pubs.aip.org
The authors survey the current state of phase change memory (PCM), a nonvolatile solid-
state memory technology built around the large electrical contrast between the highly …

Rank modulation for flash memories

A Jiang, R Mateescu, M Schwartz… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
We explore a novel data representation scheme for multilevel flash memory cells, in which a
set of n cells stores information in the permutation induced by the different charge levels of …

Efficient and robust spike-driven deep convolutional neural networks based on NOR flash computing array

Y Xiang, P Huang, R Han, C Li, K Wang… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In this article, we propose an efficient and robust spike-driven convolutional neural network
(SCNN) based on the NOR flash computing array (NFCA), which is mapped by the …

[图书][B] Floating gate devices: operation and compact modeling

P Pavan, L Larcher, A Marmiroli - 2007 - books.google.com
Floating Gate Devices: Operation and Compact Modeling focuses on standard operations
and compact modeling of memory devices based on Floating Gate architecture. Floating …

Adaptation of analog memory cell read thresholds using partial ECC syndromes

B Baum, M Anholt - US Patent 8,869,008, 2014 - Google Patents
A method includes storing data that is encoded with an Error Correction Code (ECC) in a
group of analog memory cells. The memory cells in the group are read using multiple sets of …

Understanding the relationships between self-regulated learning and students source code in a computer programming course

H Castellanos, F Restrepo-Calle… - 2017 IEEE Frontiers …, 2017 - ieeexplore.ieee.org
To increase the success in computer programming courses, it is important to understand the
learning process and common difficulties faced by students. Although several studies have …

Error-correcting codes for flash coding

Q Huang, S Lin… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
Flash memory is a nonvolatile computer storage device which consists of blocks of cells.
While increasing the voltage level of a single cell is fast and simple, reducing the level of a …

Maximizing MLC NAND lifetime and reliability in the presence of write noise

B Peleato, R Agarwal - 2012 IEEE International Conference on …, 2012 - ieeexplore.ieee.org
The aggressive scaling of the NAND flash technology has led to write noise becoming the
dominant source of disturbance in the currently shipping sub-30 nm MLC NAND memories …

Codes for multi-level flash memories: Correcting asymmetric limited-magnitude errors

Y Cassuto, M Schwartz, V Bohossian… - 2007 IEEE International …, 2007 - ieeexplore.ieee.org
Several physical effects that limit the reliability and performance of Multilevel Flash
memories induce errors that have low magnitude and are dominantly asymmetric. This …

Multidimensional flash codes

E Yaakobi, A Vardy, PH Siegel… - 2008 46th Annual …, 2008 - ieeexplore.ieee.org
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each
cell can take on q different levels corresponding to the number of electrons it contains …