Realization of fully solid-state white light emitting devices requires high efficiency blue,
green, and red emitters. However, challenges remain in boosting the low quantum efficiency …

In this chapter we discuss the main open issues for GaN-based light-emitting diode
reliability. After a comprehensive review of the possible deep levels present in these …

AlGaN-based deep ultraviolet LEDs with high Al composition are promising for many
applications, including air-or water-purification, fluorescence sensing, etc. However, to …

In this study, optical power and frequency response degradation behavior of GaN-based
micro-LEDs with bandwidth up to 800MHz were investigated under different modes …

We investigate the effects of high-rate and high total doses of 60 Co gamma rays on the
current–voltage (IV) characteristics of GaN p+ n diodes grown by metal-organic chemical …

In a light-emitting diode (LED) package, silicone encapsulant serves as a chip protector and
enables the light to transmit, since it exhibits the advantages of high light transmittance, high …

An innovative approach is proposed to passivate the existing defects from metal oxide
semiconductors by functionalizing nontoxic bio-based substances. As a demonstration, we …

The degradation and failure mechanisms of nitride phosphor in GaN‐based white LEDs are
studied using an in situ multi‐functional accelerated life test and different analytical …

Представлена диффузионная кинетическая модель деградации мощности оптического
излучения светодиода на основе двойной InGaN/GaN гетероструктуры в процессе …

Addition-curing is the most common method for preparing high-performance silicone
materials for light-emitting diode (LED) encapsulation. The structure and the hydrogen …