Review of photodetectors characterization methods
Z Bielecki, K Achtenberg, ME Kopytko… - Bulletin of the Polish …, 2022 - repo.bg.wat.edu.pl
The review includes results of analyses and research aimed at standardizing the concepts
and measurement procedures associated with photodetector parameters. Photodetectors …
and measurement procedures associated with photodetector parameters. Photodetectors …
[HTML][HTML] Low-frequency noise measurements of IR photodetectors with voltage cross correlation system
K Achtenberg, J Mikołajczyk, C Ciofi, G Scandurra… - Measurement, 2021 - Elsevier
The paper presents a system for noise measurements in infrared photodetectors
characterized by low shunt resistances based on a two-channel ultra-low-noise voltage …
characterized by low shunt resistances based on a two-channel ultra-low-noise voltage …
On the use of supercapacitors for DC blocking in transformer-coupled voltage amplifiers for low-frequency noise measurements
G Scandurra, K Achtenberg, Z Bielecki, J Mikołajczyk… - Electronics, 2022 - mdpi.com
When performing low-frequency noise measurements on low-impedance electron devices,
transformer coupling can be quite effective in reducing the contribution of the equivalent …
transformer coupling can be quite effective in reducing the contribution of the equivalent …
[HTML][HTML] Transformer-based low frequency noise measurement system for the investigation of infrared detectors' noise
K Achtenberg, J Mikołajczyk, C Ciofi, G Scandurra… - Measurement, 2022 - Elsevier
The paper presents a noise measurement system particularly suited for the investigation of
the low frequency noise in advanced infrared (IR) detectors characterized by low shunt …
the low frequency noise in advanced infrared (IR) detectors characterized by low shunt …
[PDF][PDF] Application of cross-correlation-based transimpedance amplifier in InAs and InAsSb IR detectors noise measurements
K Achtenberg, J Mikołajczyk, Z Bielecki - Opto-Electronics Review, 2022 - journals.pan.pl
The paper presents noise measurements in low-resistance photodetectors using a
crosscorrelation-based transimpedance amplifier. Such measurements usually apply a …
crosscorrelation-based transimpedance amplifier. Such measurements usually apply a …
Impact of conductivity type change in InAs/GaSb superlattice on low frequency noise of photoconductive long-wavelength infrared detectors
This Letter focuses on the 1/f noise properties of InAs/GaSb superlattice (SL), which is a
promising material for infrared radiation detection and represents one of the alternatives to …
promising material for infrared radiation detection and represents one of the alternatives to …
Electrical characterization of gate stack charge traps in floating body gate-all-around field-effect-transistors
MC Nguyen, AHT Nguyen, J Yim, AD Nguyen… - Journal of Vacuum …, 2021 - pubs.aip.org
Individual charge traps in the gate stack of gate-all-around field-effect-transistors have been
identified from their random telegraph noise (RTN) characteristics in the time and frequency …
identified from their random telegraph noise (RTN) characteristics in the time and frequency …
Low Frequency Noise Properties of InAs/GaSb Superlattice
P Śliż, D Jarosz, P Krzemiński, M Ruszała… - … Physica Polonica A …, 2022 - appol.ifpan.edu.pl
The paper reports 1/f noise properties of InAs/GaSb superlattice as a function of voltage bias
and temperature. Noise measurements were compared with standard transport …
and temperature. Noise measurements were compared with standard transport …