Solution-processed IGZO field-effect transistors with a three-step laser annealing process

J Bao, L Huang, Y Liu, F Liu, H Xie, W Wu - Journal of Materials Science …, 2024 - Springer
In this paper, a three-step annealing process was employed to treat IGZO thin-film field-effect
transistors (TFTs). We observed that TFTs prepared by an initial high-temperature thermal …

Enhancement of visible light detection for indium–gallium–zinc oxide-based transparent phototransistor via application of porous-structured polytetrafluoroethylene

H Yoo, K Kwak, IS Lee, D Kim, K Park, MS Kim… - Applied Physics …, 2022 - pubs.aip.org
In this paper, a transparent phototransistor with improved visible light detection by applying
sub gap states engineering and a porous polytetrafluoroethylene (PTFE) layer on the indium …

Bi-layered plasmonic photothermal nanocomposite heater for laser-irradiation based rapid digital annealing of metal and oxide films

YJ Kim, JJ Kim, YU Kim, MK Cho, SH Ko, J Shim… - Applied Surface …, 2024 - Elsevier
A photonic annealing technique implanting highly energetic photons provides the
characteristic advantage of triggering designated chemical/physical evolutions in materials …

Indium–Gallium–Zinc Oxide Thin-Film Transistor-Based Scan Driver Circuit Using Separate Driving Structure for Multiple Output Signals

SH Ahn, E Kim, EK Jung, S Hong… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This article proposes a scan driver circuit based on indium–gallium–zinc oxide (IGZO) thin-
film transistors (TFTs) for multiple output signals. The proposed circuit could generate two …