Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the
environmental, industrial, military, and biological fields. As a representative III-nitride …

We present a deep-ultraviolet semiconductor laser diode that operates under current
injection at room temperature and at a very short wavelength. The laser structure was grown …

In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …

We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode,
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting
diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a …

There is a rapidly growing demand for highly efficient ultraviolet (UV) light sources for a wide
variety of applications. In particular, state-of-the-art AlGaN deep UV light-emitting diodes …

It is well known that the p-type AlGaN electron blocking layer (p-EBL) can block hole
injection for deep ultraviolet light-emitting diodes (DUV LEDs). The polarization induced …

The space charge density profile of the nondoped AlGaN-based p-type cladding layer for UV-
C laser diodes realized by distributed polarization doping is examined theoretically and …

High-density dislocations in materials and poor electrical conductivity of p-type AlGaN layers
constrain the performance of the ultraviolet light emitting diodes and lasers at shorter …

Polarization induced hole doping on the order of∼ 10 18 cm− 3 is achieved in linearly
graded Al x Ga 1− x N (x= 0.7∼ 1) layer grown by molecular beam epitaxy. Graded Al x Ga …