State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
A review of micromachined sensors for automotive applications
The development of onboard sensors in combination with internet connectivity provides a
better driving experience, which fuels the growth of automotive market. The ever growing …
better driving experience, which fuels the growth of automotive market. The ever growing …
Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …
in a fully controllable way and is thus of great interest in both basic science and device …
Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
In this paper, the RF and DC characteristics of AlGaN/GaN High electron mobility transistor
is analysed using discrete field plate technique. Surprisingly, it reduces the device parasitic …
is analysed using discrete field plate technique. Surprisingly, it reduces the device parasitic …
Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications
In this paper, the RF and DC performance of AlGaN/GaN HEMT having p-type doping in
GaN buffer layer was analysed. Novelty of this work lies in the inclusion of P-type doping in …
GaN buffer layer was analysed. Novelty of this work lies in the inclusion of P-type doping in …
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …
Machine-learning-assisted multi-objective optimization in vertical zone refining of ultra-high purity indium
Optimization of processing parameters cannot rely on the trial-and-error method for the
production of ultra-high purity metals owing to the complexity of indium raw material and …
production of ultra-high purity metals owing to the complexity of indium raw material and …
Effect of InAs insertion layer on the structural and optical property improvement of InGaAs/InAlAs multiple quantum wells
X Hou, Y Kang, F Lin, B Meng, K Li, J Tang… - Journal of Alloys and …, 2024 - Elsevier
Abstract A 100 periods In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As multiple quantum wells (MQWs)
with and without 2 ML InAs insertion layers (ISLs) were grown on semi-insulating GaAs …
with and without 2 ML InAs insertion layers (ISLs) were grown on semi-insulating GaAs …
[HTML][HTML] Nanofabrications of T shape gates for high electron mobility transistors in microwaves and THz waves, a review
M Zhu, Y Xie, J Shao, Y Chen - Micro and Nano Engineering, 2021 - Elsevier
High electron mobility transistors (HEMTs) are the basic building block in microwave
monolithic integration circuits (MMICs) for broad applications in micrometer (0.3–100 GHz) …
monolithic integration circuits (MMICs) for broad applications in micrometer (0.3–100 GHz) …
Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization
HQ Yun, B Mei, YB Su, F Yang, P Ding… - Journal of Applied …, 2023 - pubs.aip.org
In this paper, an effective equivalent modeling technique has been proposed to describe
small-signal characteristics of InP-based high electron mobility transistors (HEMTs) after …
small-signal characteristics of InP-based high electron mobility transistors (HEMTs) after …