Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
[HTML][HTML] Al-rich AlGaN based transistors
AG Baca, AM Armstrong, BA Klein… - Journal of Vacuum …, 2020 - pubs.aip.org
Research results for AlGaN-channel transistors are reviewed as they have progressed from
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …
low Al-content and long-channel devices to Al-rich and short-channel RF devices. Figure of …
RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates
AG Baca, BA Klein, JR Wendt… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Al-rich AlGaN-channel high electron mobility transistors with 80-nm long gates and
85%(70%) Al in the barrier (channel) were evaluated for RF performance. The dc …
85%(70%) Al in the barrier (channel) were evaluated for RF performance. The dc …
[HTML][HTML] Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor
Improvements in radio frequency and power electronics can potentially be realized with
ultrawide bandgap materials such as aluminum gallium nitride (Al x Ga 1− x N) …
ultrawide bandgap materials such as aluminum gallium nitride (Al x Ga 1− x N) …
AlN/Al0. 5Ga0. 5N HEMTs with heavily Si-doped degenerate GaN contacts prepared via pulsed sputtering
R Maeda, K Ueno, A Kobayashi… - Applied Physics …, 2022 - iopscience.iop.org
This paper reports AlN barrier Al 0.5 Ga 0.5 N high electron mobility transistors (HEMTs) with
heavily Si-doped degenerate GaN contacts prepared by pulsed sputtering deposition …
heavily Si-doped degenerate GaN contacts prepared by pulsed sputtering deposition …
[HTML][HTML] Record> 10 MV/cm mesa breakdown fields in Al0. 85Ga0. 15N/Al0. 6Ga0. 4N high electron mobility transistors on native AlN substrates
D Khachariya, S Mita, P Reddy, S Dangi… - Applied Physics …, 2022 - pubs.aip.org
The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger
breakdown field compared to GaN, but the reported performance thus far has been limited …
breakdown field compared to GaN, but the reported performance thus far has been limited …
AlN/AlGaN/AlN quantum well channel HEMTs
We present a compositional dependence study of electrical characteristics of Al x Ga 1− x N
quantum well channel-based AlN/AlGaN/AlN high electron mobility transistors (HEMTs) with …
quantum well channel-based AlN/AlGaN/AlN high electron mobility transistors (HEMTs) with …
Al0. 85Ga0. 15N/Al0. 70Ga0. 30N high electron mobility transistors with Schottky gates and large on/off current ratio over temperature
AG Baca, BA Klein, AA Allerman… - ECS Journal of Solid …, 2017 - iopscience.iop.org
AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-
bandgap transistors that are promising candidates for RF and power applications. Long …
bandgap transistors that are promising candidates for RF and power applications. Long …