Photoresponse and photocapacitor properties of Au/AZO/p-Si/Al diode with AZO film prepared by pulsed laser deposition (PLD) method
The electrical and photoresponse properties of Au/nanostructure AZO/p-Si/Al diode were
investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition …
investigated. Al-doped ZnO (AZO) thin films were deposited via pulsed laser deposition …
XPS Studies of Electrodeposited Grown F‐Doped ZnO Rods and Electrical Properties of p‐Si/n‐FZN Heterojunctions
The chemical composition of the electrodeposited undoped and F‐doped ZnO (FZN) rods
was investigated by X‐ray photoelectron spectroscopy (XPS). These results confirmed the …
was investigated by X‐ray photoelectron spectroscopy (XPS). These results confirmed the …
The role of Al, Ba, and Cd dopant elements in tailoring the properties of c-axis oriented ZnO thin films
Highly c-axis oriented un-doped ZnO and Al-, Ba-, and Cd-doped ZnO thin films were
successfully deposited on glass substrate employing sol-gel spin coating method. XRD …
successfully deposited on glass substrate employing sol-gel spin coating method. XRD …
Thermal sensors based on delafossite film/p-silicon diode for low-temperature measurements
A CuFeO 2 film was prepared on p-type silicon wafer to fabricate an Al/CuFeO 2/p-Si/Al
diode by the sol–gel method. The temperature and frequency dependence of electrical …
diode by the sol–gel method. The temperature and frequency dependence of electrical …
[PDF][PDF] FESEM, XRD and DRS studies of electrochemically deposited boron doped ZnO films
In this study, the effect of boron (B) incorporation into zinc oxide (ZnO) has been
investigated. The undoped, 2 at.%. and 4 at.% B doped ZnO films were deposited on p-type …
investigated. The undoped, 2 at.%. and 4 at.% B doped ZnO films were deposited on p-type …
Thermal sensor based zinc oxide diode for low temperature applications
RO Ocaya, A Al-Ghamdi, F El-Tantawy… - Journal of Alloys and …, 2016 - Elsevier
The device parameters of Al/p-Si/Zn1-xAlxO-NiO/Al Schottky diode for x= 0.005 were
investigated over the 50 K–400 K temperature range using direct current–voltage (I–V) and …
investigated over the 50 K–400 K temperature range using direct current–voltage (I–V) and …
Photoresponse properties of poly (3-hexylthiophene)(P3HT) based photodiode
Z Ilter - Physica B: Condensed Matter, 2019 - Elsevier
A photosensor based poly (3-hexylthiophene)(P3HT) and phenyl-C61-butyric acid methyl
ester (PCBM): graphene oxide (GO)(P3HT: PCBM: GO) was prepared by spin coating …
ester (PCBM): graphene oxide (GO)(P3HT: PCBM: GO) was prepared by spin coating …