A review of indirect time-of-flight technologies

C Bamji, J Godbaz, M Oh, S Mehta… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Indirect time-of-flight (iToF) cameras operate by illuminating a scene with modulated light
and inferring depth at each pixel by combining the back-reflected light with different gating …

IMpixel 65nm BSI 320MHz demodulated TOF Image sensor with 3μm global shutter pixels and analog binning

CS Bamji, S Mehta, B Thompson… - … Solid-State Circuits …, 2018 - ieeexplore.ieee.org
The quest for accurate, high-resolution, low-power-consumption, and small-footprint 3D
depth cameras has driven a rapid improvement in Continuous-Wave (CW) Time-of-Flight …

A 64 64-Pixels Digital Silicon Photomultiplier Direct TOF Sensor With 100-MPhotons/s/pixel Background Rejection and Imaging/Altimeter Mode With 0.14 …

M Perenzoni, D Perenzoni… - IEEE Journal of Solid …, 2016 - ieeexplore.ieee.org
This paper describes a 64× 64-pixel 3-D imager based on single-photon avalanche diodes
(SPADs) for long-range applications, such as spacecraft navigation and landing. Each 60 …

A time-of-flight range image sensor with background canceling lock-in pixels based on lateral electric field charge modulation

SM Han, T Takasawa, K Yasutomi… - IEEE Journal of the …, 2014 - ieeexplore.ieee.org
This paper presents a CMOS time-of-flight (ToF) range image sensor using high-speed lock-
in pixels with background light canceling capability. The proposed lock-in pixel uses MOS …

A time-of-flight range sensor using four-tap lock-in pixels with high near infrared sensitivity for LiDAR applications

S Lee, K Yasutomi, M Morita, H Kawanishi, S Kawahito - Sensors, 2019 - mdpi.com
In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-
insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed …

Design of a time-of-flight sensor with standard pinned-photodiode devices toward 100-MHz modulation frequency

S Lee, D Park, S Lee, J Choi, SJ Kim - IEEE Access, 2019 - ieeexplore.ieee.org
We present an indirect Time-of-Flight (ToF) sensor based on standard pinned-photodiode
(PPD) devices and design guides to pave the way for the development of a ToF pixel …

The effect of pinned photodiode shape on time-of-flight demodulation contrast

TC Millar, N Sarhangnejad, N Katic… - IEEE transactions on …, 2017 - ieeexplore.ieee.org
An empirical investigation on improving the pinned photodiode (PPD) demodulation contrast
by tailoring the geometry of the device is presented. Results of this TCAD simulation-based …

A time-of-flight CMOS range image sensor using 4-tap output pixels with lateral-electric-field control

T Kasugai, HAN Sang-Man, H Trang… - Electronic …, 2016 - library.imaging.org
This paper presents a 160× 240-pixel CMOS Time-of-Flight (TOF) range imager with a 4-tap
charge modulator using pinned-photodiode high-speed lock-in pixels in a 0.11 μm CIS …

A back-illuminated time-of-flight image sensor with SOI-based fully depleted detector technology for LiDAR application

S Lee, K Yasutomi, HH Nam, M Morita, S Kawahito - Proceedings, 2018 - mdpi.com
A back-illuminated time-of-flight (ToF) image sensor based on a 0.2 µm silicon-on-insulator
(SOI) CMOS detector technology using fully-depleted substrate is developed for the light …

In-pixel aperture CMOS image sensor for 2-D and 3-D imaging

BS Choi, SH Kim, J Lee, D Seong, JK Shin… - IEEE Sensors …, 2018 - ieeexplore.ieee.org
This paper presents a CMOS image sensor with the in-pixel aperture technique for single-
chip 2-D and 3-D imaging. In conventional image sensors, the aperture is located at the …