Synthesis, structure, and optoelectronic properties of II–IV–V 2 materials

AD Martinez, AN Fioretti, ES Toberer… - Journal of Materials …, 2017 - pubs.rsc.org
II–IV–V2 materials offer the promise of enhanced functionality in optoelectronic devices due
to their rich ternary chemistry. In this review, we consider the potential for new optoelectronic …

Ternary nitride materials: Fundamentals and emerging device applications

AL Greenaway, CL Melamed… - Annual Review of …, 2021 - annualreviews.org
Interest in inorganic ternary nitride materials has grown rapidly over the past few decades,
as their diverse chemistries and structures make them appealing for a variety of applications …

Instilling defect tolerance in new compounds

A Walsh, A Zunger - Nature materials, 2017 - nature.com
Instilling defect tolerance in new compounds | Nature Materials Skip to main content Thank
you for visiting nature.com. You are using a browser version with limited support for CSS. To …

Upper limit to the photovoltaic efficiency of imperfect crystals from first principles

S Kim, JA Márquez, T Unold, A Walsh - Energy & Environmental …, 2020 - pubs.rsc.org
The Shockley–Queisser (SQ) limit provides a convenient metric for predicting light-to-
electricity conversion efficiency of a solar cell based on the band gap of the light-absorbing …

Experimental synthesis of theoretically predicted multivalent ternary nitride materials

A Zakutayev, SR Bauers, S Lany - Chemistry of Materials, 2022 - ACS Publications
Multivalent ternary nitride materials, which combine two metal cations with a nitrogen anion
in equal amounts and charge balanced stoichiometry, tend to have relatively simple …

Monte Carlo simulations of disorder in and the effects on the electronic structure

S Lany, AN Fioretti, PP Zawadzki, LT Schelhas… - Physical Review …, 2017 - APS
In multinary compound semiconductors, cation disorder can decisively alter the electronic
properties and impact potential applications. ZnSn N 2 is a ternary nitride of interest for …

Emerging earth-abundant solar absorbers

JW Choi, B Shin, P Gorai, RLZ Hoye, R Palgrave - 2022 - ACS Publications
Developing solar absorbers that are efficient, low-cost, stable, and composed of nontoxic,
Earth-abundant elements has long been the holy grail of nextgeneration photovoltaics (PV) …

Utilizing site disorder in the development of new energy-relevant semiconductors

RR Schnepf, JJ Cordell, MB Tellekamp… - ACS Energy …, 2020 - ACS Publications
Controlling site disorder in ternary and multinary compounds enables tuning optical and
electronic properties at fixed lattice constants and stoichiometries, moving beyond many of …

Review of ZnSnN2 semiconductor material

IS Khan, KN Heinselman… - Journal of physics …, 2020 - iopscience.iop.org
Zinc tin nitride (ZnSnN 2) is one of the emerging ternary nitride semiconductors considered
for photovoltaic device applications due to its attractive and tunable material properties and …

Combinatorial synthesis of magnesium tin nitride semiconductors

AL Greenaway, AL Loutris… - Journal of the …, 2020 - ACS Publications
Nitride materials feature strong chemical bonding character that leads to unique crystal
structures, but many ternary nitride chemical spaces remain experimentally unexplored. The …