Conspectus Electronics manufacturing involves Cu electrodeposition to form 3D circuitry of
arbitrary complexity. This ranges from nanometer-wide interconnects between individual …

Robust, void-free Cu electrodeposition in high-aspect ratio features relies on careful tuning
of electrolyte additives, concentrations, and electrochemical parameters for a given feature …

Void-free Cu electrodeposition in high aspect ratio features requires, at a minimum, an
additive package containing micromolar halide and polyether that combine to form a co …

The copper pattern electroplating rate significantly impacts electronic packaging substrate
preparation efficiency. The direct current (DC) electroplating technique has great potential in …

The void-free filling of microvia through copper electronic plating in printed circuit board
application relies critically on multi-component additives including suppressor, accelerator …

The microstructure of copper filled through silicon vias deposited in a CuSO 4+ H 2 SO 4
electrolyte containing micromolar concentrations of deposition rate suppressing poloxamine …

Galvanostatic method based on the convection-dependent adsorption (CDA) model can be
effectively utilized to predict the blind via filling performance but failed in evaluating the …

This paper aims to develop a proper and valid simulation model for electroplating complex
geometries. Since many variables influence the quality of the deposited coating and its …

The microstructure and crystallographic texture of copper electrodeposits in millimeter scale
through silicon vias are characterized using electron backscatter diffraction. The deposits …

Through silicon via (TSV) technology is crucial for modern semiconductor device package,
enabling high-performance integrated microsystems. This paper investigates the …