We report tunable ferromagnetic properties of thin films of fullerene upon 1 MeV proton
microbeam ion irradiation, by varying the ion fluence. Focused microbeam scanning of 1 …

Radiation induced oxide and interface trapping characteristics in Al/HfO 2/Si MOS capacitor
under 60 Co gamma ray are studied in this article. We discovered positive oxide trapped …

To provide radiation hard device is very critical and when a new technology come into
existence it becomes more challenging. In this research paper we have explored the …

The performance of electronic devices and systems get degraded when they are exposed to
radiation above a certain limit or over longer duration and the process is called radiation …

Abstract Properties and quality of thin films depend on the methods used to deposit it. ALD is
a surface dependent process and is one of the best deposition techniques because of the …

In this work, we investigated the mixing of different constituent layers in an HfO 2 dielectric
oxide semiconductor by performing transmission electron microscope (TEM) …

the radiation response of hafnium oxide based metal-insulator-metal capacitors under 60 Co
gamma-ray is studied in this article. TiN/HfO 2/TiN structure is prepared by using atomic …

The continuous downscaling leads the search of high-κ gate dielectrics. The films
amorphous in nature offered good mechanical flexibility, smooth surfaces and better …