With its remarkable electro-thermal properties such as the highest known thermal
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …

Diamond has a variety of unique characteristics, including integrates mechanics, electricity,
heat, optics and other excellent properties, so that it is widely focus on the field of high and …

This paper proposes a system-level comparison between diamond and silicon carbide (SiC)
power devices. It highlights the benefits of diamond semiconductors for power electronics …

In this work, we searched electrical and morphological properties of the Au/SiO2/n-Si
structures with graphene oxide (GO) and poly (3-cyclohexyl-4-methyl-2, 5 …

In this work, wide temperature range junction sensor was fabricated and comprehensively
analyzed by grown of Graphene oxide (GO)-Fe 3 O 4 blend on a p-type Si substrate via spin …

Herein, we demonstrated the fabrication and operation of vertical diamond Schottky barrier
diode (SBD) as a high-performance temperature sensor. The current transport mechanism …

The small silicon chip of Schottky diode (0.8× 0.8× 0.4 mm 3) with planar arrangement of
electrodes (chip PSD) as temperature sensor, which functions under the operating …

We employed hematoxylin as interfacial layer between the n-and p-type silicon substrate
and cobalt (Co) metallic contact to obtain and compare Co/hematoxylin/n-Si and …

Temperature is one of the seven fundamental physical quantities. The ability to measure
temperatures approaching absolute zero has driven numerous advances in low-temperature …

We have measured the current? voltage-temperature (IVT) characteristics of the Au/n-
GaAs/In Schottky barrier diodes (SBDs) to introduce their thermal sensitivity mechanism. The …