The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …

Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a
conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD …

K. Toko, R. Numata, N. Oya, N. Fukata, N. Usami, T. Suemasu; Low-temperature (180 C)
formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced …

(111)-oriented Ge thin films on insulators are essential for advanced electronics and
photovoltaic applications. We investigate Al-induced crystallization of amorphous-Ge films …

Selective formation of Ge (100) and (111) on amorphous-insulator at low-temperatures (∼
250 C) is realized through gold-induced-crystallization using a-Ge/Au/SiO 2 stacked …

By developing a low-temperature (≤ 300 C) fabrication process for the gate-stack structure
on Ge (111), we study electrical properties of thin film transistors (TFTs) consisting of (111) …

Structural and electrical properties of a Ge (111) layer directly grown on a Si (111) substrate
are studied. Via optimized two-step growth manner, we form a high-quality relaxed Ge layer …

In recent years, germanium has attracted intensive interests for its promising applications in
the microelectronics industry. However, to achieve high performance Ge channel devices …

This paper overviews the present status of Ge MOSFET technology, particularly focusing on
n-FETs in terms of materials science of GeO 2/Ge gate stacks and device physics of …

Direct deposition of high-dielectric-constant oxides on high-mobility semiconductors with low
trap densities is the key to high-performance metal–oxide–semiconductor (MOS) devices …