Tunable nanophotonics enabled by chalcogenide phase-change materials
Nanophotonics has garnered intensive attention due to its unique capabilities in molding the
flow of light in the subwavelength regime. Metasurfaces (MSs) and photonic integrated …
flow of light in the subwavelength regime. Metasurfaces (MSs) and photonic integrated …
A review of germanium-antimony-telluride phase change materials for non-volatile memories and optical modulators
Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
Understanding the phase-change mechanism of rewritable optical media
Present-day multimedia strongly rely on rewritable phase-change optical memories. We
demonstrate that, different from the current consensus, Ge2Sb2Te5, the material of choice in …
demonstrate that, different from the current consensus, Ge2Sb2Te5, the material of choice in …
Structure of phase change materials for data storage
Phase change materials based on chalcogenide alloys play an important role in optical and
electrical memory devices. Both applications rely on the reversible phase transition of these …
electrical memory devices. Both applications rely on the reversible phase transition of these …
Logic computation in phase change materials by threshold and memory switching
M Cassinerio, N Ciocchini, D Ielmini - Advanced Materials, 2013 - Wiley Online Library
Moore's law for complementary metal-oxide-semiconductor (CMOS) integrated circuits
predicts that the number of devices per chip increases by a factor 2 every two years.[1] …
predicts that the number of devices per chip increases by a factor 2 every two years.[1] …
Amorphous-to-crystal transition of nitrogen-and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements
S Privitera, E Rimini, R Zonca - Applied physics letters, 2004 - pubs.aip.org
The amorphous-to-crystal transition has been studied through in situ resistance
measurements in Ge2Sb2Te5 thin films doped by ion implantation with nitrogen or oxygen …
measurements in Ge2Sb2Te5 thin films doped by ion implantation with nitrogen or oxygen …
Emerging phase change memory devices using non-oxide semiconducting glasses
S Agarwal, P Lohia, DK Dwivedi - Journal of Non-Crystalline Solids, 2022 - Elsevier
In the new computing world, phase-change memory (PCM) has recently evolved as a non-
volatile key-enabling technology that has been used as memory storage. PCM has also …
volatile key-enabling technology that has been used as memory storage. PCM has also …
Active-Tuning and Polarization-Independent Absorber and Sensor in the Infrared Region Based on the Phase Change Material of Ge2Sb2Te5 (GST)
Abstract Phase-change materials (PCMs), possessing thermo-optic and thermo-electric
properties, have constantly enabled the rewritable optical data storage and the …
properties, have constantly enabled the rewritable optical data storage and the …
Structural transition and enhanced phase transition properties of Se doped Ge2Sb2Te5 alloys
EM Vinod, K Ramesh, KS Sangunni - Scientific reports, 2015 - nature.com
Abstract Amorphous Ge2Sb2Te5 (GST) alloy, upon heating crystallize to a metastable NaCl
structure around 150° C and then to a stable hexagonal structure at high temperatures (≥ …
structure around 150° C and then to a stable hexagonal structure at high temperatures (≥ …
Intrinsic complexity of the melt-quenched amorphous GeSbTe memory alloy
Through the use of first-principles Ge K-edge XANES simulations we demonstrate that the
structure of melt-quenched amorphous Ge-Sb-Te is intrinsically complex and is a mixture of …
structure of melt-quenched amorphous Ge-Sb-Te is intrinsically complex and is a mixture of …