Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
Comparative study of etching high crystalline quality AlN and GaN
High-quality AlN and GaN bulk crystals were etched in a KOH aqueous solution or a
KOH/H2O2 mixture. As etched surfaces were characterized by scanning electron …
KOH/H2O2 mixture. As etched surfaces were characterized by scanning electron …
AlN/GaN Digital alloy for mid-and deep-ultraviolet optoelectronics
Abstract The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by
stacking ultra-thin (≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we …
stacking ultra-thin (≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we …
Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
We systematically study the origins and mechanisms for unintentional incorporation of
gallium (Ga) during epitaxial growth of ternary InAlN thin-film layers. The origins of auto …
gallium (Ga) during epitaxial growth of ternary InAlN thin-film layers. The origins of auto …
Reduction of electron leakage of AlGaN-based deep ultraviolet laser diodes using an inverse-trapezoidal electron blocking layer
ZQ Xing, YJ Zhou, YH Liu, F Wang - Chinese Physics Letters, 2020 - iopscience.iop.org
To improve the optical and electrical properties of AlGaN-based deep ultraviolet lasers, an
inverse-trapezoidal electron blocking layer is designed. Lasers with three different structural …
inverse-trapezoidal electron blocking layer is designed. Lasers with three different structural …
Performance analysis for 263 nm AlGaN DUV EELD by different EBL techniques
HU Rehman, MI Niass, F Wang, Y Liu - Optik, 2023 - Elsevier
Theoretical calculations with LASTIP software for the electrically driven edge-emitting laser
diode (EELD) composed of trinary Aluminum Gallium Nitride (AlGaN) with optimized …
diode (EELD) composed of trinary Aluminum Gallium Nitride (AlGaN) with optimized …
Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating
We propose a new origin of unintentional gallium (Ga) incorporation during the epitaxial
growth of AlInN layers. We observed substantial amount of Ga in AlInN layers on GaN-free …
growth of AlInN layers. We observed substantial amount of Ga in AlInN layers on GaN-free …
Fast and uniform growth of graphene glass using confined-flow chemical vapor deposition and its unique applications
Fast and uniform growth of high-quality graphene on conventional glass is of great
importance for practical applications of graphene glass. We report herein a confined-flow …
importance for practical applications of graphene glass. We report herein a confined-flow …
Large optical gain AlInN-delta-GaN quantum well for deep ultraviolet emitters
The optical gain and spontaneous emission characteristics of low In-content AlInN-delta-
GaN quantum wells (QWs) are analyzed for deep ultraviolet (UV) light emitting diodes …
GaN quantum wells (QWs) are analyzed for deep ultraviolet (UV) light emitting diodes …
Numerical investigation on the device performance of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes
We report on the illustration of the first electron blocking layer (EBL) free AlInN nanowire
light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region (sub …
light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region (sub …