Materials in which quantum mechanical effects lead to novel properties on the macroscopic
scale are of interest both fundamentally and for applications. For such quantum materials …

The Haldane-Hubbard model is a prime example of the combined effects of band topology
and electronic interaction. We revisit its spinful phase diagram at half filling as a consensus …

The information content of one-electron bulk and edge states in semiconductor quantum
wells is calculated in the inverted regime, where edge states, topologically protected, are …

We investigate the effects of electronic correlations on the Bernevig-Hughes-Zhang model
using the real-space density matrix renormalization group (DMRG) algorithm. We introduce …

Nanowires of BiSe show topological states localized near the surface of the material. The
topological nature of these states can be analyzed using well-known quantities. In this …

We investigate magnetotransport on Bernal-stacked tetralayer graphene whose band
structure consists of two massive subbands with different effective masses. Under a finite …

A suitable magnetic doped InAs/GaSb or HgTe/CdTe quantum well (QW) shows the
coexistence of the quantum spin Hall and quantum anomalous Hall (QAH) phases. We study …

Abstract From Dirac semimetal to Weyl semimetal, a break inversion of time-inversion
symmetry (TIS) or inversion symmetry (IS) is required-from this point of view, the possibility of …

The inverted band structure discovered in InAs/GaSb quantum well (QW) is found to host the
topological quantum spin Hall (QSH) states. A QSH insulator hosts counterpropagating spin …

Los avances tecnológicos logrados en las últimas décadas, y la aspiración a producir
dispositivos que funciones en el régimen cuántico para aprovechar sus novedosas …