Analytical and numerical model of spiral inductors on high resistivity silicon substrates

K Mallik, A Abuelgasim, N Hashim, P Ashburn… - Solid-state …, 2014 - Elsevier
Passive devices and spiral inductors in particular suffer severely from losses in the silicon
substrate underneath. This major component in limiting the quality factor of spiral inductors …

[PDF][PDF] High performance CMOS based LC-VCO design using high Q-factor, field shield layered substrate inductor

MR Sarika, K Balamurugan - 2018 - digitalrepo.kalasalingam.ac.in
ted inductor on a three layered substrate in order to obtain lower phase noise and to
improve the FOM of the VCO. This work is focused on improving Q-factor and L-density of …

Low loss 67-GHz coplanar waveguides and spiral inductors on 100 kΩcm gold-doped high resistivity Cz-Silicon

A Abuelgasim, N Hashim, HMC Chong… - 2014 IEEE 14th …, 2014 - ieeexplore.ieee.org
In this paper, we demonstrate the ability of deep level doping to reduce the substrate losses
in coplanar waveguides and spiral inductors. Room temperature resistivity of Au doped …

High resistivity Czochralski-silicon using deep level dopant compensation for RF passive devices

A Abuelgasim - 2012 - eprints.soton.ac.uk
Combinations of analytical and experimental results indicate that deep level doping of
Czochralski grown silicon wafers is capable of providing very high resistivity wafers suitable …

Equalizers

M Atef, H Zimmermann, M Atef… - Optoelectronic Circuits in …, 2016 - Springer
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a journal Publish with us Track your research Search Cart Book cover Optoelectronic Circuits in …

Founded by

HKV Lotsch, WT Rhodes - Springer
There is no commonly agreed definition of the upper and lower frequency limits of terahertz
(THz) radiation. Its spectral range overlaps with the far-infrared at the higher frequency end …