3D simulation of impact ionization induced kink effect in AlGaN/GaN HEMTs: A novel split channel design with asymmetric double gate for kink suppression
In this paper, we present 3D simulation of AlGaN/GaN High Electron Mobility Transistors
(HEMTs) to demonstrate impact ionization generated kink effect on current-voltage …
(HEMTs) to demonstrate impact ionization generated kink effect on current-voltage …
Study and suppression of ambipolar effect in multilayer phosphorene tunnel field effect transistors using double gate structure
We present a comprehensive study of ambipolar effect in multilayer phosphorene tunnel
field-effect transistors (TFETs). Phosphorene is a promising 2D material with tunable …
field-effect transistors (TFETs). Phosphorene is a promising 2D material with tunable …
[PDF][PDF] Effect of Geometrical and Physical parameters of AlGaN/GaN HEMT on the electrical characteristics with AlN spacer layer
The goal of this manuscript is to use the Silvaco Atlas TCAD simulator to investigate the
effect of some parameters on the current-voltage characteristics of a high-electronmobility …
effect of some parameters on the current-voltage characteristics of a high-electronmobility …
OFF-State Reliability of pGaN Power HEMTs
M Millesimo - 2019 - amslaurea.unibo.it
The concern for climate changes and the increase in the electricity demand turned the
attention towards the production, sorting and use of electric energy through zero emission …
attention towards the production, sorting and use of electric energy through zero emission …
[引用][C] ANALYSIS OF EFFECTS OF TEMPERATURE IN p-GAN HEMT AT HIGHER GATE & DRAIN BIAS
N MEGHWAL - 2021 - NATIONAL INSTITUTE OF …