III–V/Ge channel MOS device technologies in nano CMOS era
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …
promising devices for high-performance and low power advanced LSIs in the future …
Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers
WJH Berghuis, J Melskens, B Macco… - Journal of Materials …, 2021 - Springer
Surfaces of semiconductors are notorious for the presence of electronic defects such that
passivation approaches are required for optimal performance of (opto) electronic devices …
passivation approaches are required for optimal performance of (opto) electronic devices …
Excellent surface passivation of germanium by a-Si: H/Al2O3 stacks
WJH Berghuis, J Melskens, B Macco… - Journal of Applied …, 2021 - pubs.aip.org
Surface passivation of germanium is vital for optimal performance of Ge based
optoelectronic devices especially considering their rapidly increasing surface-to-volume …
optoelectronic devices especially considering their rapidly increasing surface-to-volume …
III-V/Ge MOS device technologies for low power integrated systems
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …
promising devices for high performance and low power integrated systems in the future …
Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process
For realizing Ge CMOS devices with a small equivalent oxide thickness (EOT) and a low
density of fast interface states (D it), understanding of slow traps in Ge gate stacks and …
density of fast interface states (D it), understanding of slow traps in Ge gate stacks and …
Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation
R Zhang, X Yu, M Takenaka… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Mechanisms of the mobility degradation in high normal field (or N) in Ge p-and n-metal-
oxide–semiconductor field-effect transistors (MOSFETs) with plasma postoxidation GeO …
oxide–semiconductor field-effect transistors (MOSFETs) with plasma postoxidation GeO …
Properties of slow traps of ALD Al2O3/GeOx/Ge nMOSFETs with plasma post oxidation
The realization of Ge gate stacks with a small amount of slow trap density as well as thin
equivalent oxide thickness and low interface state density (D it) is a crucial issue for Ge …
equivalent oxide thickness and low interface state density (D it) is a crucial issue for Ge …
Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs
X Yu, J Kang, R Zhang, WL Cai, M Takenaka… - Microelectronic …, 2015 - Elsevier
High mobility ultrathin-body GeOI MOSFETs with improved interfacial quality of the buried
oxide interfaces are demonstrated in this study. We have realized these devices by flipping …
oxide interfaces are demonstrated in this study. We have realized these devices by flipping …
Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation
The realization of Ge gate stacks with thin equivalent oxide thickness (EOT), low interface
state density (D it) and small hysteresis is a crucial issue for Ge CMOS. In this study, we …
state density (D it) and small hysteresis is a crucial issue for Ge CMOS. In this study, we …
Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation
For realizing of Ge complementary metal-oxide-semiconductor with a Ge gate stack with thin
equivalent oxide thickness, low interface state density (D it) and high reliability. In this paper …
equivalent oxide thickness, low interface state density (D it) and high reliability. In this paper …