Assembly of one dimensional inorganic nanostructures into functional 2D and 3D architectures. Synthesis, arrangement and functionality
RK Joshi, JJ Schneider - Chemical Society Reviews, 2012 - pubs.rsc.org
This review will focus on the synthesis, arrangement, structural assembly, for current and
future applications, of 1D nanomaterials (tubes, wires, rods) in 2D and 3D ordered …
future applications, of 1D nanomaterials (tubes, wires, rods) in 2D and 3D ordered …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …
Vertically aligned p-type single-crystalline GaN nanorod arrays on n-type Si for heterojunction photovoltaic cells
Vertically aligned Mg-doped GaN nanorods have been epitaxially grown on n-type Si
substrate to form a heterostructure for fabricating p− n heterojunction photovoltaic cells. The …
substrate to form a heterostructure for fabricating p− n heterojunction photovoltaic cells. The …
GaN nanowires grown by molecular beam epitaxy
KA Bertness, NA Sanford… - IEEE Journal of selected …, 2010 - ieeexplore.ieee.org
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed.
These properties include the absence of residual strain, exclusion of most extended defects …
These properties include the absence of residual strain, exclusion of most extended defects …
Wurtzite GaN nanocolumns grown on Si (001) by molecular beam epitaxy
L Cerutti, J Ristić, S Fernández-Garrido… - Applied physics …, 2006 - pubs.aip.org
Wurtzite single crystal GaN nanocolumns were grown by plasma-assisted molecular beam
epitaxy on bare Si (001) substrates. Nanocolumns with diameters in the range of 20–40 nm …
epitaxy on bare Si (001) substrates. Nanocolumns with diameters in the range of 20–40 nm …
Si donor incorporation in GaN nanowires
Z Fang, E Robin, E Rozas-Jiménez, A Cros… - Nano …, 2015 - ACS Publications
With increasing interest in GaN based devices, the control and evaluation of doping are
becoming more and more important. We have studied the structural and electrical properties …
becoming more and more important. We have studied the structural and electrical properties …
Strain relaxation and quantum confinement in InGaN/GaN nanoposts
HS Chen, DM Yeh, YC Lu, CY Chen, CF Huang… - …, 2006 - iopscience.iop.org
Nanoposts of 10–40 nm top diameter on an InGaN/GaN quantum well structure were
fabricated using electron-beam lithography and inductively coupled plasma reactive ion …
fabricated using electron-beam lithography and inductively coupled plasma reactive ion …
Axial and radial growth of Ni-induced GaN nanowires
GaN nanowires (NWs) were grown on sapphire by molecular beam epitaxy. NWs form only
in the presence of Ni seed particles and only under N-rich conditions. Their length increases …
in the presence of Ni seed particles and only under N-rich conditions. Their length increases …
Blue fluorescent carbon thin films fabricated from dodecylamine-capped carbon nanoparticles
D Pan, J Zhang, Z Li, Z Zhang, L Guo… - Journal of Materials …, 2011 - pubs.rsc.org
Blue fluorescent carbon thin films fabricated from dodecylamine-capped carbon nanoparticles -
Journal of Materials Chemistry (RSC Publishing) DOI:10.1039/C0JM03763J Royal Society of …
Journal of Materials Chemistry (RSC Publishing) DOI:10.1039/C0JM03763J Royal Society of …
Coalescence overgrowth of GaN nanocolumns on sapphire with patterned metal organic vapor phase epitaxy
TY Tang, WY Shiao, CH Lin, KC Shen… - Journal of Applied …, 2009 - pubs.aip.org
High-quality coalescence overgrowth of patterned-grown GaN nanocolumns on c-plane
sapphire substrate with metal organic chemical vapor deposition is demonstrated. Although …
sapphire substrate with metal organic chemical vapor deposition is demonstrated. Although …