Wurtzite Ga N∕ Al N quantum dots (QDs) are studied by time-resolved photoluminescence.
Careful measurements allow us to reach the regime of a single electron-hole pair per dot …

Growth, structural and optical properties of GaN quantum dots are reviewed, with a special
emphasis on plasma-assisted molecular beam epitaxy. The versatility of this technique …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

We present a series of microdisk lasers realized within the same GaN-on-Si photonic
platform scheme, and operating at room temperature under pulsed optical pumping over a …

In-depth optical spectroscopic studies of single polar Ga N∕ Al N quantum dots (QDs)
grown by molecular beam epitaxy are carried out by means of low-temperature …

Taking advantage of the strain-induced 2-dimensional (2D)–3D “Stransky–Krastanov type”
growth mode of GaN on AlxGa1− xN, we report on the fabrication of ultraviolet (UV) light …

Coupling of acoustic phonons to excitons in single wurtzite-type GaN/AlN quantum dots is
investigated in detail by cathodoluminescence experiments and compared to theory …

Al x Ga 1− x N-based ultra-violet (UV) light emitting diodes (LEDs) are seen as the best
solution for the replacement of traditional mercury lamp technology. By adjusting the Al …

We analyze the room temperature photoluminescence properties of several multilayer
stackings of GaN/AlN quantum dots. We report drastic differences of emission energies and …

Electronic properties of quantum dots are reviewed based on eight-band k⋅ p theory. We
will focus on the following interrelated subjects: First the role of crystallographic symmetry is …