Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent …
Potential applications of bulk GaN and AlN crystals have made possible single and
multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005 …
multilayer allotropes of these III-V compounds to be a focus of interest recently. As of 2005 …
Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to
M Feneberg, S Osterburg, K Lange, C Lidig, B Garke… - Physical Review B, 2014 - APS
The interplay between band gap renormalization and band filling (Burstein-Moss effect) in n-
type wurtzite GaN is investigated. For a wide range of electron concentrations up to 1.6× 10 …
type wurtzite GaN is investigated. For a wide range of electron concentrations up to 1.6× 10 …
Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers
Y Matsukura, T Inazu, C Pernot, N Shibata… - Applied Physics …, 2021 - iopscience.iop.org
In this study, we investigated the relationship of light output power with the optical thickness
of the p-layers in AlGaN-based deep ultraviolet light-emitting diodes with a transparent high …
of the p-layers in AlGaN-based deep ultraviolet light-emitting diodes with a transparent high …
Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes
The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based
on (0001)-oriented Al x Ga 1− x N multiple quantum wells (MQWs) has been studied by …
on (0001)-oriented Al x Ga 1− x N multiple quantum wells (MQWs) has been studied by …
Revisiting the substitutional Mg acceptor binding energy of AlN
R Ishii, A Yoshikawa, M Funato, Y Kawakami - Physical Review B, 2023 - APS
Bipolar (n-and p-type) electric conductivity control is at the heart of semiconductor
technologies. However, achieving such control in ultrawide-band-gap semiconductors has …
technologies. However, achieving such control in ultrawide-band-gap semiconductors has …
Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220 nm
M Guttmann, F Mehnke, B Belde, F Wolf… - Japanese Journal of …, 2019 - iopscience.iop.org
The influence of aluminum mole fraction of Al x Ga 1-x N/Al y Ga 1-y N multiple quantum
wells (MQWs) on the optical polarization, light extraction efficiency (LEE) and external …
wells (MQWs) on the optical polarization, light extraction efficiency (LEE) and external …
Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices
In this paper, the optimal growth conditions during the physical vapour transport of bulk AlN
crystals are evaluated with regard to significantly increased deep UV transparency, while …
crystals are evaluated with regard to significantly increased deep UV transparency, while …
[图书][B] Handbook of GaN semiconductor materials and devices
This book addresses material growth, device fabrication, device application, and
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …
Optical properties of the organic-inorganic hybrid perovskite : Theory and experiment
We perform a theoretical and experimental study of the optical properties of a CH 3 NH 3 Pb
I 3 perovskite prepared by a vapor-assisted solution process, motivated in part by very high …
I 3 perovskite prepared by a vapor-assisted solution process, motivated in part by very high …
GaN -plane: Atomic structure, surface bands, and optical response
M Landmann, E Rauls, WG Schmidt, MD Neumann… - Physical Review B, 2015 - APS
Density-functional-theory calculations are combined with many-body perturbation theory in
order to elucidate the geometry, electronic, and optical properties of the wz-GaN (1 1¯ 00) …
order to elucidate the geometry, electronic, and optical properties of the wz-GaN (1 1¯ 00) …