The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in
aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical …

GaN community has recently recognized that it is imperative that the extended, and point
defects in GaN and related materials, and the mechanisms for their formation are …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

(57) ABSTRACT A GaN crystal having up to about 5 mole percent of at least one of
aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having …

The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN
templates with the same LED structure. One on thin GaN template (∼ 2 μ m) with high …

Defects in GaN layers grown by hydride vapor-phase epitaxy have been investigated by
photoelectrochemical (PEC) etching, and by wet etching in hot H 3 PO 4 acid and molten …

The impact of several wet etchants commonly encountered in the microelectronic industry on
the surface chemistry of GaN on silicon was explored. In order to get closer to fully recessed …

Morphology and microstructure of dislocation etch pits in GaN epilayers etched by molten
KOH have been investigated by atomic force microscopy, scanning electron microscopy …

Orthodox etching of HVPE-grown GaN in molten eutectic of KOH+ NaOH (E etch) and in hot
sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are …

Mg diffusion is a common problem in GaN devices with p–n junctions. Although this impurity
diffusion is reported to occur through threading dislocations (TDs), no direct evidence has …