Thermal scanning probe lithography is used for creating lithographic patterns with 27.5 nm
half-pitch line density in a 50 nm thick high carbon content organic resist on a Si substrate …

Fluorine cold plasmas produced by an electrical discharge in SF 6, CF 4, CHF 3 or C 4 F 8
gases, principally, have two main fields of application. The first and historical application is …

In this review, we discuss the progress of emerging dry processes with atomic precision.
Researchers in the field of plasma processing and surface science have addressed the …

This article proposes an original method to achieve topographically selective etching. It
relies on cycling a two-step process comprising a plasma implantation step and a removal …

Molecular dynamics simulations of low-energy (5–100 eV) Cl+ and Cl 2+ bombardment on
(100) Si surfaces are performed to investigate the impact of plasma dissociation and very …

A microelectronic method for etching a layer to be etched, including: modifying the layer to
be etched from a surface of the layer to be etched and over a depth corresponding to at least …

Changes in the ion flux and the time-averaged ion distribution functions are reported for
pulsed, inductively coupled RF plasmas (ICPs) operated over a range of duty cycles. For …

Ultrathin layered films in new transistors architectures (FinFET and fully depleted SOI)
require damage-free plasma etching techniques with unprecedented selectivity between …

Comparisons between measurements and spatially-averaged (0D) simulations of low-
pressure Ar and Cl 2 pulsed-plasmas in an industrial inductively coupled reactor are …

To achieve the etching of silicon nitride spacers with a perfect anisotropy and an almost
infinite selectivity, an alternative method consisting of two sequential steps—surface …