Metallic Nanoalloys on Vertical GaAs Nanowires: Growth Mechanisms and Shape Control of Ni-GaAs Compounds

N Mallet, J Müller, J Pezard, F Cristiano… - … Applied Materials & …, 2023 - ACS Publications
GaAs nanowires are promising candidates for emerging devices in a broad field of
applications (eg, nanoelectronics, photodetection, or photoconversion). These …

Broadband antireflective coatings for high efficiency InGaP/GaAs/InGaAsP/InGaAs multi-junction solar cells

G Oh, Y Kim, SJ Lee, EK Kim - Solar Energy Materials and Solar Cells, 2020 - Elsevier
Abstract Design and fabrication of antireflection coatings (ARCs) was performed to maximize
the photocurrent of Ⅲ-Ⅴ solar cells based on InGaP, GaAs, InGaAsP, and InGaAs. The …

Modeling and experimental analysis of photovoltaic parameters of GaInP/GaAs dual junction p–i–n solar cell

B Kınaci - Brazilian Journal of Physics, 2021 - Springer
In this study, the modeling and experimental analysis of photovoltaic parameters of the
GaInP/GaAs dual–junction (DJ) p–i–n solar cell structure were examined. The design of the …

The performance analysis of the GaAs/c-InN solar photovoltaic cell hetero-structure: temperature dependence

T Ataser - Optical and Quantum Electronics, 2020 - Springer
The numerical analysis of the GaAs/c-InN solar photovoltaic cell (SPC) hetero-structure has
been investigated by means of an analytical solar cell model in the temperature range 200 …

Diamagnetic susceptibility and optical properties of a spherical quantum dot: effects of the parabolic and the shifted parabolic potentials

M Tshipa - Optical and Quantum Electronics, 2019 - Springer
Centred charge donor related diamagnetic susceptibility and optical properties of a
spherical GaAs quantum dot are presented. In particular, effects of intrinsic parabolic and …

Investigation of V-groove fabricated GaInNAs nipi solar cell structure

A Muhammetgulyyev, Y Yalçın, F Kuruoğlu… - Optical and Quantum …, 2021 - Springer
An anisotropic etching of 1 eV Ga 0.92 In 0.08 N 0.03 As 0.97 grown on (100) p-type GaAs
substrate was investigated. Effects of the V-groove etching profile and metallization on the …

A comparative between CdS and CdSe quantum dots doped manganese for photovoltaic enhancement

HT Tung, DH Phuc - Optical and Quantum Electronics, 2021 - Springer
In this study, we report the fabrication of the photovoltaic devices based on CdS/CdSe
multilayer photoanodes, in which Mn 2+ ions were doped into CdS or CdSe quantum dots …

Uudentyyppinen metallikontakti III–V-puolijohdeaurinkokennojen hyötysuhteen parantamiseksi

N Kajas - 2019 - trepo.tuni.fi
Puolijohdeaurinkokennot ovat toistaiseksi lupaavin menetelmä tuottaa sähkövirtaa
aurinkoenergian avulla. Suurin hyötysuhde on saavutettu III-V-puolijohteista valmistetulla …