Lattice strain and defects analysis in nanostructured semiconductor materials and devices by high‐resolution X‐ray diffraction: Theoretical and practical aspects
The reliability of semiconductor materials with electrical and optical properties are
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
connected to their structures. The elastic strain field and tilt analysis of the crystal lattice …
[HTML][HTML] High-temperature terahertz quantum cascade lasers
B Wen, D Ban - Progress in Quantum Electronics, 2021 - Elsevier
The terahertz (THz) quantum cascade laser (QCL), first demonstrated in 2002, is among the
most promising radiation sources in the THz region owing to its high output power and broad …
most promising radiation sources in the THz region owing to its high output power and broad …
Midinfrared plasmon-enhanced spectroscopy with germanium antennas on silicon substrates
Midinfrared plasmonic sensing allows the direct targeting of unique vibrational fingerprints of
molecules. While gold has been used almost exclusively so far, recent research has focused …
molecules. While gold has been used almost exclusively so far, recent research has focused …
Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
n-type Ge/SiGe terahertz quantum cascade lasers are investigated using non-equilibrium
Green's functions calculations. We compare the temperature dependence of the terahertz …
Green's functions calculations. We compare the temperature dependence of the terahertz …
[HTML][HTML] THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
We report electroluminescence originating from L-valley transitions in n-type Ge/Si 0.15 Ge
0.85 quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of Δ …
0.85 quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of Δ …
Near-and far-infrared absorption and electronic structure of Ge-SiGe multiple quantum wells
We report an extensive study of strained Ge/Si 0.2 Ge 0.8 multiquantum wells grown by
ultrahigh-vacuum chemical-vapor deposition. The microstructural properties of the samples …
ultrahigh-vacuum chemical-vapor deposition. The microstructural properties of the samples …
Broadly tunable single-mode mid-infrared quantum cascade lasers
In this paper, we review the recent progress in broadly tunable single-mode mid-infrared
quantum cascade lasers (QCLs). With a brief introduction on various applications of broadly …
quantum cascade lasers (QCLs). With a brief introduction on various applications of broadly …
Evaluation of material systems for THz quantum cascade laser active regions
Quantum cascade lasers (QCLs) have been realized in several different material systems. In
the mid‐infrared, active regions are predominantly based on In0. 53Ga0. 47As and InAs as …
the mid‐infrared, active regions are predominantly based on In0. 53Ga0. 47As and InAs as …
[HTML][HTML] 8-band k· p modelling of mid-infrared intersubband absorption in Ge quantum wells
DJ Paul - Journal of Applied Physics, 2016 - pubs.aip.org
The 8-band k· p parameters which include the direct band coupling between the conduction
and the valence bands are derived and used to model optical intersubband transitions in Ge …
and the valence bands are derived and used to model optical intersubband transitions in Ge …
Design and simulation of losses in Ge/SiGe terahertz quantum cascade laser waveguides
K Gallacher, M Ortolani, K Rew, C Ciano… - Optics …, 2020 - opg.optica.org
The waveguide losses from a range of surface plasmon and double metal waveguides for
Ge/Si_1− xGe_x THz quantum cascade laser gain media are investigated at 4.79 THz (62.6 …
Ge/Si_1− xGe_x THz quantum cascade laser gain media are investigated at 4.79 THz (62.6 …